Statistical modeling of dynamic random access memory data retention characteristics

A. Hiraiwa*, M. Ogasawara, N. Natsuaki, Y. Itoh, H. Iwai

*この研究の対応する著者

研究成果: Article査読

17 被引用数 (Scopus)

抄録

A statistical model to investigate the distribution of dynamic random access memory data retention times is proposed. The model assumes that the retention time is determined by a junction leakage current generated at carrier traps by a Shockley-Read-Hall process, and that the trap levels are randomly distributed not only among the memory cells but also within a cell. Monte Carlo results based on the model were in excellent agreement with experimental results, which confirmed the validity of the model. An analytical expression of the retention time distribution was also derived, and proved a good approximation near the 50% cumulative probability. Based on the model, variation in the retention time distributions among samples was found to be related to different trap-level distributions at the SiO2/Si interface.

本文言語English
ページ(範囲)3091-3099
ページ数9
ジャーナルJournal of Applied Physics
80
5
出版ステータスPublished - 1996 9 1
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(全般)
  • 物理学および天文学(その他)

フィンガープリント

「Statistical modeling of dynamic random access memory data retention characteristics」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル