STM modification of MoS2 in the nanometer-scale using a gas-solid reaction

Makiko Kohno*, Takahisa Doi, Tsuyoshi Hasegawa, Satoshi Tomimatsu, Shigeyuki Hosoki

*この研究の対応する著者

研究成果: Article査読

3 被引用数 (Scopus)

抄録

We report on the nanometer-scale modification of a MoS2 surface by scanning tunneling microscopy (STM) with an electric field lower than that required for field evaporation by STM. It is known that a Pt-Ir STM tip dissolves H2 gas into atomic hydrogen which is chemically active. We applied this phenomenon to STM modification to lower the electric field necessary for atom detachment. A Pt-Ir tip was used to dissolve the H2 gas on the MoS2 surface. The gas-solid reaction enhanced the evaporation of the top-layer sulfur atoms, which were removed at a low electric field of about 2.4 V nm-1. The present study shows that we can control STM modification well with the same feedback loop as that used for STM observation.

本文言語English
ページ(範囲)588-590
ページ数3
ジャーナルThin Solid Films
281-282
1-2
DOI
出版ステータスPublished - 1996 8 1
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 表面および界面
  • 表面、皮膜および薄膜
  • 金属および合金
  • 材料化学

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