Strain-balanced InAsP/InP/InGaAs multiple quantum well structures for mid-infrared photodetectors

M. Wada, S. Araki, T. Kudou, T. Umezawa, S. Nakajima, T. Ueda

研究成果: Article査読

抄録

The strain-balanced InAsP/InP/InGaAs multiple quantum well (MQW) structures for mid-wavelength-infrared photodetectors are presented. The MQW consists of 42% strained InAsP wells, InP barriers and 2% strained InGaAs layers, where the strained InP/InAsP/InP quantum wells provide a light-absorbing layer and the strain is entirely compensated by introducing thin strained InGaAs layers.

本文言語English
ページ(範囲)1744-1745
ページ数2
ジャーナルElectronics Letters
38
25
DOI
出版ステータスPublished - 2002 12 5
外部発表はい

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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