Strain distribution and electronic states in stacked InAs/GaAs quantum dots with dot spacing 0-6nm

T. Saito, T. Nakaoka, T. Kakitsuka, Y. Yoshikuni, Y. Arakawa

研究成果: Conference article

30 引用 (Scopus)

抜粋

We have calculated the strain distribution and electronic structures in stacked InAs/GaAs quantum dots (QDs) with the dot spacing 6-0nm. We used the elastic continuum theory for the strain distribution, and the 8-band k·p theory for the electronic structures. For the triply stacked QDs, the light-hole (LH) component of the hole ground state increases with decreasing the dot spacing. The LH component in the columnar QD (dot spacing 0nm) reaches 21.1% which is 4.8 times larger than that in the single QD due to the reduction of the biaxial strain. Further increase of the LH component (up to 28.6%) is obtained in the fivefold-stacked columnar QD. This result suggests a possibility of increase in the TM-mode transition in the columnar QDs.

元の言語English
ページ(範囲)217-221
ページ数5
ジャーナルPhysica E: Low-Dimensional Systems and Nanostructures
26
発行部数1-4
DOI
出版物ステータスPublished - 2005 2 1
外部発表Yes
イベントInternational Conference on Quantum Dots - Banff, Alberta, Canada
継続期間: 2004 5 102004 5 13

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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