Strain distribution around SiO2/Si interface in Si nano wires: A molecular dynamics study

Hiromichi Ohta, Takanobu Watanabe, Iwao Ohdomari

研究成果: Article査読

46 被引用数 (Scopus)

抄録

We have performed three-dimensional molecular dynamics simulations to investigate strain and stress distributions in silicon nanostructures covered with thermal oxide films, by using our original molecular force field for Si, O mixed systems. We have modeled a wire-shaped nanostructure by carving a Si(001) substrate, and then an oxide film with a uniform thickness was formed by inserting oxygen atom into Si-Si bonds from the surface. The simulation results show that a compressive stress is concentrated on the oxide region in the vicinity of the side SiO2/Si interface of the nanowire. At the top interface, there is also a compressive stress in the [110] direction, whereas the [001] component of the normal stress tensor is almost relaxed. These results suggest that the oxidation is strongly suppressed at the side faces of the silicon nanowire.

本文言語English
ページ(範囲)3277-3282
ページ数6
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
46
5 B
DOI
出版ステータスPublished - 2007 5 17

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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