Electron-doped infinite-layer compound Sr1-xLaxCuO2(SLCO) is suitable for fundamental studies and device applications because of the simplest crystal structure and the highest Tc among electron-doped superconducting cuprates. The epitaxially grown c-axis oriented SLCO thin films with Tc of around 40 K were fabricated on the lattice matched substrates like DyScO3 and KTaO3. Since the in-plane coherence length xab(4.5nm) of SLCO is much larger than the out-of-plane coherence length xc(0.3nm), the a-axis oriented films are favorable for junction fabrication. However, compared with c-axis oriented thin films, the resistivities of a-axis oriented thin films were thousands times larger and the properties were semiconductor-like. It's reasonable to consider that the unclear strain effect from LAO substrates need to be clarified. In this paper, we report on a systematic investigation of the structure and electrical properties of c-axis oriented SLCO thin films grown on BaySr1-yTiO3 (BSTO) buffer layers with tunability of the lattice constant from a0=0.3905 nm (y=0, SrTiO3) to a0=0.4000 nm (y=1, BaTiO3), which is favorable to obtain a quantified result of strain effect. We also report on structure and electrical properties improvement of a-axis oriented SLCO thin films on LAO substrates by strain effect control which has been quanti-ficationally studied by c-axis oriented SLCO thin films.