Strain-induced modifications of the electronic states of InGaAs quantum dots embedded in bowed airbridge structures

T. Nakaoka, T. Kakitsuka, T. Saito, S. Kako, S. Ishida, M. Nishioka, Y. Yoshikuni, Y. Arakawa

研究成果: Article査読

15 被引用数 (Scopus)

抄録

The strong strain distribution induced in the bowed airbridge and the effect on the electronic states of the quantum dots (QD) were investigated. The strain distribution in and around the QD was calculated by the finite element method. The strain in the bowed airbridge to distribute from tensile to compressive along the growth direction was shown by the finite element calculation. The calculation demonstrated that the characteristic strain distribution around the dot embedded in the bowed airbridge modified not only the energy levels, but also the wave functions.

本文言語English
ページ(範囲)6812-6817
ページ数6
ジャーナルJournal of Applied Physics
94
10
DOI
出版ステータスPublished - 2003 11 15
外部発表はい

ASJC Scopus subject areas

  • Physics and Astronomy(all)

フィンガープリント 「Strain-induced modifications of the electronic states of InGaAs quantum dots embedded in bowed airbridge structures」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル