Strain-induced transconductance enhancement by pattern dependent oxidation in silicon nanowire field-effect transistors

A. Seike*, T. Tange, Y. Sugiura, I. Tsuchida, H. Ohta, T. Watanabe, D. Kosemura, A. Ogura, I. Ohdomari

*この研究の対応する著者

研究成果: Article査読

32 被引用数 (Scopus)

抄録

Transconductance (gm) enhancement in n -type and p -type nanowire field-effect-transistors (nwFETs) is demonstrated by introducing controlled tensile strain into channel regions by pattern dependent oxidation (PADOX). Values of gm are enhanced relative to control devices by a factor of 1.5 in p -nwFETs and 3.0 in n -nwFETs. Strain distributions calculated by a three-dimensional molecular dynamics simulation reveal predominantly horizontal tensile stress in the nwFET channels. The Raman lines in the strain controlled devices display an increase in the full width at half maximum and a shift to lower wavenumber, confirming that gm enhancement is due to tensile stress introduced by the PADOX approach.

本文言語English
論文番号202117
ジャーナルApplied Physics Letters
91
20
DOI
出版ステータスPublished - 2007

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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