Strain-induced transconductance enhancement by pattern dependent oxidation in silicon nanowire field-effect transistors

A. Seike, T. Tange, Y. Sugiura, I. Tsuchida, H. Ohta, Takanobu Watanabe, D. Kosemura, A. Ogura, I. Ohdomari

    研究成果: Article

    27 引用 (Scopus)

    抄録

    Transconductance (gm) enhancement in n -type and p -type nanowire field-effect-transistors (nwFETs) is demonstrated by introducing controlled tensile strain into channel regions by pattern dependent oxidation (PADOX). Values of gm are enhanced relative to control devices by a factor of 1.5 in p -nwFETs and 3.0 in n -nwFETs. Strain distributions calculated by a three-dimensional molecular dynamics simulation reveal predominantly horizontal tensile stress in the nwFET channels. The Raman lines in the strain controlled devices display an increase in the full width at half maximum and a shift to lower wavenumber, confirming that gm enhancement is due to tensile stress introduced by the PADOX approach.

    元の言語English
    記事番号202117
    ジャーナルApplied Physics Letters
    91
    発行部数20
    DOI
    出版物ステータスPublished - 2007

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    transconductance
    nanowires
    field effect transistors
    tensile stress
    oxidation
    augmentation
    silicon
    control equipment
    strain distribution
    display devices
    molecular dynamics
    shift
    simulation

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    これを引用

    Strain-induced transconductance enhancement by pattern dependent oxidation in silicon nanowire field-effect transistors. / Seike, A.; Tange, T.; Sugiura, Y.; Tsuchida, I.; Ohta, H.; Watanabe, Takanobu; Kosemura, D.; Ogura, A.; Ohdomari, I.

    :: Applied Physics Letters, 巻 91, 番号 20, 202117, 2007.

    研究成果: Article

    Seike, A, Tange, T, Sugiura, Y, Tsuchida, I, Ohta, H, Watanabe, T, Kosemura, D, Ogura, A & Ohdomari, I 2007, 'Strain-induced transconductance enhancement by pattern dependent oxidation in silicon nanowire field-effect transistors', Applied Physics Letters, 巻. 91, 番号 20, 202117. https://doi.org/10.1063/1.2812577
    Seike, A. ; Tange, T. ; Sugiura, Y. ; Tsuchida, I. ; Ohta, H. ; Watanabe, Takanobu ; Kosemura, D. ; Ogura, A. ; Ohdomari, I. / Strain-induced transconductance enhancement by pattern dependent oxidation in silicon nanowire field-effect transistors. :: Applied Physics Letters. 2007 ; 巻 91, 番号 20.
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    AU - Tange, T.

    AU - Sugiura, Y.

    AU - Tsuchida, I.

    AU - Ohta, H.

    AU - Watanabe, Takanobu

    AU - Kosemura, D.

    AU - Ogura, A.

    AU - Ohdomari, I.

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