Thick p-InGaN layers were grown on GaN by metalorganic vapor phase epitaxy to investigate the strain inside p-InGaN using a reciprocal space map of X-ray diffraction intensity, It was found that a large part of p-InGaN grows coherently on the GaN buffer layer, even though it is much thicker than the calculated critical thickness. This result means that few dislocations are generated at the InGaN/GaN interface. Using this strained thick p-InGaN as a base, a GaN/InGaN heterojunction bipolar transistor was fabricated on a sapphire substrate. Its maximum current gain was as high as 1000 and its offset voltage as low as 0.2V, which matches that calculated from the conduction-band discontinuity between the n-GaN emitter and the p-InGaN base.
|ジャーナル||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版ステータス||Published - 2005 4月|
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