Chemical vapor deposition (CVD) of tungsten is an important process to make interconnections in advanced integrated-circuit devices. As device dimensions continue to decrease, incomplete nucleation inside the trenches and via holes is becoming a crucial issue. In this work, micro-Auger electron spectroscopy with in-plane spatial resolution was applied for the first time to study the nucleation and growth process of W islands. Results showed that W grew slowly and uniformly on TiN surfaces up to about one-monolayer coverage, and then W islands nucleated and started to grow rapidly. This transition from layer to island shows that W grew by Stranski-Krastanov mode during CVD on TiN from WF6 and SiH4. Drastic difference might exist in chemical reactivity between the initial W layer on TiN surfaces and the W islands, causing the change in W growth rate.
|ジャーナル||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版ステータス||Published - 2004 10月|
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