Stress release drives growth transition of quaterrylene thin films on Sio2 surfaces

Ryoma Hayakawa, XueNa Zhang, Helmut Dosch, Nobuya Hiroshiba, Toyohiro Chikyow, Yutaka Wakayama*

*この研究の対応する著者

研究成果: Article査読

11 被引用数 (Scopus)

抄録

The growth process of quaterrylene thin films was examined by atomic force microscopy and in-plane and out-of-plane X-ray diffraction (XRD). Quaterrylene thin films on the SiO2 surface exhibit the Stranski-Krastanov (SK) growth mode; the films initially formed two-dimensional (2D) layers (<4 monolayers (ML)) followed by three-dimensional (3D) island growth. Grazing incidence X-ray diffraction (GIXD) measurement revealed that the first few layers were subjected to compressive stress along the b axis of the unit cell, resulting in expansion of the a- and c-lattice constants. This result revealed that compressive stress generated in the 2D layers drives the change of the growth mode to 3D. An understanding of the transition mechanism in early growth has important implications for the improvement of carrier transport in organic field-effect transistors.

本文言語English
ページ(範囲)2197-2199
ページ数3
ジャーナルJournal of Physical Chemistry C
113
6
DOI
出版ステータスPublished - 2009 2 12
外部発表はい

ASJC Scopus subject areas

  • 物理化学および理論化学
  • 電子材料、光学材料、および磁性材料
  • 表面、皮膜および薄膜
  • エネルギー(全般)

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