Stress release drives growth transition of quaterrylene thin films on Sio2 surfaces

Ryoma Hayakawa, XueNa Zhang, Helmut Dosch, Nobuya Hiroshiba, Toyohiro Chikyow, Yutaka Wakayama

研究成果: Article

10 引用 (Scopus)

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The growth process of quaterrylene thin films was examined by atomic force microscopy and in-plane and out-of-plane X-ray diffraction (XRD). Quaterrylene thin films on the SiO2 surface exhibit the Stranski-Krastanov (SK) growth mode; the films initially formed two-dimensional (2D) layers (<4 monolayers (ML)) followed by three-dimensional (3D) island growth. Grazing incidence X-ray diffraction (GIXD) measurement revealed that the first few layers were subjected to compressive stress along the b axis of the unit cell, resulting in expansion of the a- and c-lattice constants. This result revealed that compressive stress generated in the 2D layers drives the change of the growth mode to 3D. An understanding of the transition mechanism in early growth has important implications for the improvement of carrier transport in organic field-effect transistors.

元の言語English
ページ(範囲)2197-2199
ページ数3
ジャーナルJournal of Physical Chemistry C
113
発行部数6
DOI
出版物ステータスPublished - 2009 2 12
外部発表Yes

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Energy(all)

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  • これを引用

    Hayakawa, R., Zhang, X., Dosch, H., Hiroshiba, N., Chikyow, T., & Wakayama, Y. (2009). Stress release drives growth transition of quaterrylene thin films on Sio2 surfaces. Journal of Physical Chemistry C, 113(6), 2197-2199. https://doi.org/10.1021/jp809556p