TY - JOUR
T1 - Structural analysis and transistor properties of hetero-molecular bilayers
AU - Hiroshiba, Nobuya
AU - Hayakawa, Ryoma
AU - Petit, Matthieu
AU - Chikyow, Toyohiro
AU - Matsuishi, Kiyoto
AU - Wakayama, Yutaka
PY - 2009/11/30
Y1 - 2009/11/30
N2 - We examined the film morphologies and transistor properties of hetero-molecular bilayer consisting of N, N'-dioctyl-3, 4, 9, 10-perylenedicarboximide (PTCDI-C8) and quaterrylene. First, the structure and carrier conduction of PTCDI-C8 films were studied, followed by an analysis of the carrier accumulation process in a PTCDI-C8/quaterrylene hetero-bilayer transistor. Based on the displacement current measurement (DCM), we stress the potential of the hetero-bilayer for tuning carrier accumulation like carrier doping techniques in field-effect transistors.
AB - We examined the film morphologies and transistor properties of hetero-molecular bilayer consisting of N, N'-dioctyl-3, 4, 9, 10-perylenedicarboximide (PTCDI-C8) and quaterrylene. First, the structure and carrier conduction of PTCDI-C8 films were studied, followed by an analysis of the carrier accumulation process in a PTCDI-C8/quaterrylene hetero-bilayer transistor. Based on the displacement current measurement (DCM), we stress the potential of the hetero-bilayer for tuning carrier accumulation like carrier doping techniques in field-effect transistors.
KW - Displacement current measurement
KW - Hetero-interface
KW - Organic Field Effect transistor
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U2 - 10.1016/j.tsf.2009.07.050
DO - 10.1016/j.tsf.2009.07.050
M3 - Article
AN - SCOPUS:70349847270
VL - 518
SP - 441
EP - 443
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 2
ER -