Structural and electric properties of AgGaTe2 layers prepared using mixed source of Ag2Te and Ga2Te3

Aya Uruno*, Masakazu Kobayashi


研究成果: Article査読

6 被引用数 (Scopus)


AgGaTe2 layers were prepared on Si substrates by a closed space sublimation method using a mixed powder source of Ag2Te and Ga2Te3. Ag2Te buffer layer deposition was introduced to eliminate melt-back etching. The effect of the molar ratio of Ag2Te and Ga2Te3 in the mixed source on the crystallinity of the AgGaTe2 layer was investigated. The composition and the phase of the layer was found to change depending on the molar ratio in the deposits, which could be controlled by the source molar ratio along with the Ag2Te buffer layer thickness. It was confirmed that (112) oriented uniform AgGaTe2 layer with an abrupt interface between AgGaTe2 and Si was formed after those parameters were tuned. The obtained layer exhibited the acceptor concentration of around 2.5 × 1016 cm−3. A solar cell was fabricated using the p-AgGaTe2/n-Si heterojunction, and exhibited a conversion efficiency of 1.15%.

ジャーナルPhysica Status Solidi (A) Applications and Materials Science
出版ステータスPublished - 2017 1 1

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 表面および界面
  • 表面、皮膜および薄膜
  • 電子工学および電気工学
  • 材料化学


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