Structural and electrical properties of beryllium implanted silicon carbide

T. Henkel, Y. Tanaka, Naoto Kobayashi, H. Tangue, M. Gong, X. D. Chen, S. Fung, C. D. Beling

研究成果: Conference contribution

4 引用 (Scopus)

抜粋

Structural and electrical properties of beryllium implanted silicon carbide have been investigated by secondary ion mass spectrometry, Rutherford backscattering as well as deep level transient spectroscopy, resistivity and Hall measurements. Strong redistributions of the beryllium profiles have been found after a short post-implantation anneal cycle at temperatures between 1500°C and 1700°C. In particular, diffusion towards the surface has been observed which caused severe depletion of beryllium in the surface region. The crystalline state of the implanted material is well recovered already after annealing at 1450°C. However, four deep levels induced by the implantation process have been detected by deep level transient spectroscopy.

元の言語English
ホスト出版物のタイトルMaterials Research Society Symposium - Proceedings
出版者Materials Research Society
ページ117-122
ページ数6
572
出版物ステータスPublished - 1999
外部発表Yes
イベントProceedings of the 1999 MRS Spring Meeting - Symposium on 'Wide-Bandgap Semiconductors for High-Power, High Frequency and High-Temperature Applications' - San Francisco, CA, USA
継続期間: 1999 4 51999 4 8

Other

OtherProceedings of the 1999 MRS Spring Meeting - Symposium on 'Wide-Bandgap Semiconductors for High-Power, High Frequency and High-Temperature Applications'
San Francisco, CA, USA
期間99/4/599/4/8

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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  • これを引用

    Henkel, T., Tanaka, Y., Kobayashi, N., Tangue, H., Gong, M., Chen, X. D., Fung, S., & Beling, C. D. (1999). Structural and electrical properties of beryllium implanted silicon carbide. : Materials Research Society Symposium - Proceedings (巻 572, pp. 117-122). Materials Research Society.