Structural and electrical properties of H-terminated diamond field-effect transistor

Michal Kubovic, Makoto Kasu*, Yoshiharu Yamauchi, Kenji Ueda, Hiroyuki Kageshima

*この研究の対応する著者

研究成果: Article査読

21 被引用数 (Scopus)

抄録

A dielectric barrier separating hydrogen induced p-type channel and Al gate metal contact of diamond FET has been investigated. The separation barrier is necessary to prevent tunneling current between the H-induced channel and the gate contact. In this investigation, CV measurements, fitting of forward IV characteristics, TEM and SIMS profiles have been used to obtain a more detailed picture of this barrier layer. While the composition of this layer is not clear, TEM and SIMS measurements indicate that this layer may be connected to a diamond phase or aluminium oxide. Using material properties of these materials, thickness of the separation layer extracted from the CV measurements was between 5-10 nm and the channel sheet change density was above 1 × 1013 cm- 2. This thickness is in good agreement with the TEM observations. Frequency dependent CV measurements showed almost no frequency dependence, and no UV light dependence has been observed. Temperature dependent CV measurements showed a decrease of the dielectric constant at 100 °C. Fitting of the forward tunnelling current indicated a thickness of the barrier layer of about 5 nm with a barrier height of 2.4 eV.

本文言語English
ページ(範囲)796-799
ページ数4
ジャーナルDiamond and Related Materials
18
5-8
DOI
出版ステータスPublished - 2009 5月
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 化学 (全般)
  • 機械工学
  • 材料化学
  • 電子工学および電気工学

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