Half-Heusler La-Pt-Bi thin films have been deposited on YAlO 3(001) substrate by 3-source magnetron co-sputtering. Control of the Bi content was the critical factor to obtain single phase, c-axis-oriented thin films. Generation of secondary phases was effectively prevented by precise control of the deposition rate for separate targets as well as adjustment of the deposition temperature. The realization of single-phase LaPtBi thin films will provide new potential applications to topological insulating devices based on Heusler alloys.
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