Structural and electrical properties of half-Heusler La-Pt-Bi thin films grown by 3-source magnetron co-sputtering

Tetsuya Miyawaki*, Nozomi Sugimoto, Naoto Fukatani, Tatsuhiko Yoshihara, Kenji Ueda, Nobuo Tanaka, Hidefumi Asano

*この研究の対応する著者

研究成果: Article査読

7 被引用数 (Scopus)

抄録

Half-Heusler La-Pt-Bi thin films have been deposited on YAlO 3(001) substrate by 3-source magnetron co-sputtering. Control of the Bi content was the critical factor to obtain single phase, c-axis-oriented thin films. Generation of secondary phases was effectively prevented by precise control of the deposition rate for separate targets as well as adjustment of the deposition temperature. The realization of single-phase LaPtBi thin films will provide new potential applications to topological insulating devices based on Heusler alloys.

本文言語English
論文番号07E327
ジャーナルJournal of Applied Physics
111
7
DOI
出版ステータスPublished - 2012 4月 1
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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