Structural and magnetic properties of antiferromagnetic Heusler Ru2MnGe Epitaxial thin films

Naoto Fukatani; Hirohito Fujita; Tetsuya Miyawaki; Kenji Ueda; Hidefumi Asano

doi:10.3938/jkps.63.711

Structural and magnetic properties of antiferromagnetic Heusler Ru₂MnGe Epitaxial thin films

Naoto Fukatani^*, Hirohito Fujita, Tetsuya Miyawaki, Kenji Ueda, Hidefumi Asano

^*この研究の対応する著者

研究成果: Article › 査読

10 被引用数 (Scopus)

抄録

Structural and magnetic properties were investigated for Heusler-type alloy Ru₂MnGe thin films. Ru₂MnGe films on MgO substrate were subjected to an in-plane compressive strain, and exhibited enhanced antiferromagnetic (AFM) transition temperature (T _N) up to 353 K, which exceeds by 37 K from the cubic bulk material (T _N = 316 K). We also observed the exchange coupling between Ru₂MnGe and Heusler-type ferromagnetic (FM) half-metal Fe₂CrSi thin films. The present AFM Heusler alloy with relatively high T _N is useful to fabricate high-quality all Heusler-type half-metal AFM/FM junctions and is a promising material for the emerging field of AFM spintronics.

本文言語	English
ページ（範囲）	711-715
ページ数	5
ジャーナル	Journal of the Korean Physical Society
巻	63
号	3
DOI	https://doi.org/10.3938/jkps.63.711
出版ステータス	Published - 2013 8月
外部発表	はい

ASJC Scopus subject areas

物理学および天文学（全般）

文献へのアクセス

10.3938/jkps.63.711

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引用スタイル

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title = "Structural and magnetic properties of antiferromagnetic Heusler Ru2MnGe Epitaxial thin films",

abstract = "Structural and magnetic properties were investigated for Heusler-type alloy Ru2MnGe thin films. Ru2MnGe films on MgO substrate were subjected to an in-plane compressive strain, and exhibited enhanced antiferromagnetic (AFM) transition temperature (T N) up to 353 K, which exceeds by 37 K from the cubic bulk material (T N = 316 K). We also observed the exchange coupling between Ru2MnGe and Heusler-type ferromagnetic (FM) half-metal Fe2CrSi thin films. The present AFM Heusler alloy with relatively high T N is useful to fabricate high-quality all Heusler-type half-metal AFM/FM junctions and is a promising material for the emerging field of AFM spintronics.",

keywords = "Epitaxial strain, Exchange bias, Heusler alloys, N{\'e}el temperature, RuMnGe",

author = "Naoto Fukatani and Hirohito Fujita and Tetsuya Miyawaki and Kenji Ueda and Hidefumi Asano",

note = "Funding Information: This work was partially supported by Grants-in-Aid for Scientific Research (Nos. 20360005 and 23656214) from the Ministry of Education, Culture, Sports, Science and Technology and by a Grant-in-Aid from the Japan Society for the Promotion of Science Fellows.",

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AU - Fukatani, Naoto

AU - Fujita, Hirohito

AU - Miyawaki, Tetsuya

AU - Ueda, Kenji

AU - Asano, Hidefumi

N1 - Funding Information: This work was partially supported by Grants-in-Aid for Scientific Research (Nos. 20360005 and 23656214) from the Ministry of Education, Culture, Sports, Science and Technology and by a Grant-in-Aid from the Japan Society for the Promotion of Science Fellows.

PY - 2013/8

Y1 - 2013/8

N2 - Structural and magnetic properties were investigated for Heusler-type alloy Ru2MnGe thin films. Ru2MnGe films on MgO substrate were subjected to an in-plane compressive strain, and exhibited enhanced antiferromagnetic (AFM) transition temperature (T N) up to 353 K, which exceeds by 37 K from the cubic bulk material (T N = 316 K). We also observed the exchange coupling between Ru2MnGe and Heusler-type ferromagnetic (FM) half-metal Fe2CrSi thin films. The present AFM Heusler alloy with relatively high T N is useful to fabricate high-quality all Heusler-type half-metal AFM/FM junctions and is a promising material for the emerging field of AFM spintronics.

AB - Structural and magnetic properties were investigated for Heusler-type alloy Ru2MnGe thin films. Ru2MnGe films on MgO substrate were subjected to an in-plane compressive strain, and exhibited enhanced antiferromagnetic (AFM) transition temperature (T N) up to 353 K, which exceeds by 37 K from the cubic bulk material (T N = 316 K). We also observed the exchange coupling between Ru2MnGe and Heusler-type ferromagnetic (FM) half-metal Fe2CrSi thin films. The present AFM Heusler alloy with relatively high T N is useful to fabricate high-quality all Heusler-type half-metal AFM/FM junctions and is a promising material for the emerging field of AFM spintronics.

KW - Epitaxial strain

KW - Exchange bias

KW - Heusler alloys

KW - Néel temperature

KW - RuMnGe

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