Structural and morphological control of nanosized Cu islands on SiO 2 using a Ti underlayer

Minghui Hu; Suguru Noda; Tatsuya Okubo; Yukio Yamaguchi; Hiroshi Komiyama

doi:10.1063/1.1597972

Structural and morphological control of nanosized Cu islands on SiO ₂ using a Ti underlayer

Minghui Hu^*, Suguru Noda, Tatsuya Okubo, Yukio Yamaguchi, Hiroshi Komiyama

^*この研究の対応する著者

研究成果: Article › 査読

19 被引用数 (Scopus)

抄録

The structural and morphological control of nanosized Cu islands on SiO₂ using a Ti underlayer were discussed. It was found that the Cu islands on Ti/SiO₂ possessed smaller sizes, shorter interisland distance and a higher number density that those on SiO₂. The analysis suggested the fabrication of nanosized islands with the desired wettability and crystalline orientation using an appropriate metal underlayer.

本文言語	English
ページ（範囲）	3492-3497
ページ数	6
ジャーナル	Journal of Applied Physics
巻	94
号	5
DOI	https://doi.org/10.1063/1.1597972
出版ステータス	Published - 2003 9月 1
外部発表	はい

ASJC Scopus subject areas

物理学および天文学（全般）

文献へのアクセス

10.1063/1.1597972

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引用スタイル

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AU - Komiyama, Hiroshi

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