Structural and optical characterization of β-FeSi2 layers on Si formed by ion beam synthesis

Naoto Kobayashi, H. Katsumata, H. L. Shen, M. Hasegawa, Y. Makita, H. Shibata, S. Kimura, A. Obara, S. Uekusa, T. Hatano

研究成果: Article

28 引用 (Scopus)

抜粋

Structural and optical properties have been investigated for surface β-FeSi2 layers on Si(100) and Si(111) formed by ion beam synthesis using 56Fe ion implantations with three different energies (140-50 keV) and subsequent two-step annealing at 600 °C and up to 915 °C. Rutherford backscattering spectrometry analyses have revealed Fe redistribution in the samples after the annealing procedure, which resulting in a Fe-deficient composition in the formed layers. X-ray diffraction experiments confirmed the existence of /gb-FeSi2 by annealing up to 915 °C, whereas the phase transformation from the β to α phase has been induced at 930 °C. In photoluminescence measurements at 2 K, both β-FeSi2 Si(100) and β-FeSi2 Si(111) samples, after annealing at 900-915 °C for 2 h, have shown two dominant emissions peaked around 0.836 eV and 0.80 eV, which nearly coincided with previously reported PL emissions from the sample prepared by electron beam deposition. Another β-FeSi2 Si(100) sample has shown sharp emissions peaked at 0.873 eV and 0.807 eV. Optical absorption measurements at room temperature have revealed the allowed direct bandgap of 0.868-0.885 eV as well as an absorption coefficient of the order of 104 cm-1 near the absorption edge for all samples.

元の言語English
ページ(範囲)406-410
ページ数5
ジャーナルThin Solid Films
270
発行部数1-2
DOI
出版物ステータスPublished - 1995 12 1
外部発表Yes

    フィンガープリント

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces
  • Condensed Matter Physics

これを引用

Kobayashi, N., Katsumata, H., Shen, H. L., Hasegawa, M., Makita, Y., Shibata, H., Kimura, S., Obara, A., Uekusa, S., & Hatano, T. (1995). Structural and optical characterization of β-FeSi2 layers on Si formed by ion beam synthesis. Thin Solid Films, 270(1-2), 406-410. https://doi.org/10.1016/0040-6090(95)06723-X