Structural and optoelectronic properties and their relationship with strain relaxation in heteroepitaxial InP layers grown on GaAs substrates

D. J. Olego, Y. Okuno, Toshihiro Kawano, M. Tamura

研究成果: Article

31 引用 (Scopus)

抄録

Heteroepitaxial layers of InP with thickness D ranging from 0.1 to 6.0 μm were grown by low-pressure metalorganic chemical vapor deposition on (001) surfaces of GaAs substrates. Their dislocation structure, induced strains, and nature of the radiative recombinations were investigated as a function of D with transmission electron microscopy, x-ray diffraction, and photoluminescence spectroscopy. For D7 cm-2 range when D surpasses 4.0 μm. Concomitant with the improved crystalline quality, the following observations are made. Firstly, the full width at half maximum of the x-ray rocking curves diminishes from values larger than 500 arcsec for D

元の言語English
ページ(範囲)4492-4501
ページ数10
ジャーナルJournal of Applied Physics
71
発行部数9
DOI
出版物ステータスPublished - 1992
外部発表Yes

Fingerprint

radiative recombination
metalorganic chemical vapor deposition
x ray diffraction
low pressure
photoluminescence
transmission electron microscopy
curves
spectroscopy
x rays

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

これを引用

@article{2f76bae5ae1b443fa0a1a80a5938fd3b,
title = "Structural and optoelectronic properties and their relationship with strain relaxation in heteroepitaxial InP layers grown on GaAs substrates",
abstract = "Heteroepitaxial layers of InP with thickness D ranging from 0.1 to 6.0 μm were grown by low-pressure metalorganic chemical vapor deposition on (001) surfaces of GaAs substrates. Their dislocation structure, induced strains, and nature of the radiative recombinations were investigated as a function of D with transmission electron microscopy, x-ray diffraction, and photoluminescence spectroscopy. For D7 cm-2 range when D surpasses 4.0 μm. Concomitant with the improved crystalline quality, the following observations are made. Firstly, the full width at half maximum of the x-ray rocking curves diminishes from values larger than 500 arcsec for D",
author = "Olego, {D. J.} and Y. Okuno and Toshihiro Kawano and M. Tamura",
year = "1992",
doi = "10.1063/1.350794",
language = "English",
volume = "71",
pages = "4492--4501",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "9",

}

TY - JOUR

T1 - Structural and optoelectronic properties and their relationship with strain relaxation in heteroepitaxial InP layers grown on GaAs substrates

AU - Olego, D. J.

AU - Okuno, Y.

AU - Kawano, Toshihiro

AU - Tamura, M.

PY - 1992

Y1 - 1992

N2 - Heteroepitaxial layers of InP with thickness D ranging from 0.1 to 6.0 μm were grown by low-pressure metalorganic chemical vapor deposition on (001) surfaces of GaAs substrates. Their dislocation structure, induced strains, and nature of the radiative recombinations were investigated as a function of D with transmission electron microscopy, x-ray diffraction, and photoluminescence spectroscopy. For D7 cm-2 range when D surpasses 4.0 μm. Concomitant with the improved crystalline quality, the following observations are made. Firstly, the full width at half maximum of the x-ray rocking curves diminishes from values larger than 500 arcsec for D

AB - Heteroepitaxial layers of InP with thickness D ranging from 0.1 to 6.0 μm were grown by low-pressure metalorganic chemical vapor deposition on (001) surfaces of GaAs substrates. Their dislocation structure, induced strains, and nature of the radiative recombinations were investigated as a function of D with transmission electron microscopy, x-ray diffraction, and photoluminescence spectroscopy. For D7 cm-2 range when D surpasses 4.0 μm. Concomitant with the improved crystalline quality, the following observations are made. Firstly, the full width at half maximum of the x-ray rocking curves diminishes from values larger than 500 arcsec for D

UR - http://www.scopus.com/inward/record.url?scp=0005902716&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0005902716&partnerID=8YFLogxK

U2 - 10.1063/1.350794

DO - 10.1063/1.350794

M3 - Article

AN - SCOPUS:0005902716

VL - 71

SP - 4492

EP - 4501

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 9

ER -