Structural and vibrational properties of GaN

T. Deguchi, D. Ichiryu, K. Toshikawa, K. Sekiguchi, Takayuki Sota, R. Matsuo, T. Azuhata, M. Yamaguchi, T. Yagi, S. Chichibu, S. Nakamura

    研究成果: Article

    83 引用 (Scopus)

    抄録

    Structural and vibrational properties of device quality pure GaN substrate grown using a lateral epitaxial overgrowth (LEO) technique were studied using x-ray diffraction, Brillouin, Raman, and infrared spectroscopy. Lattice constants were found to be a = 3.1896±0.0002 Å and c = 5.1855 ±0.0002 Å. Comparing the results with those on GaN epilayer directly grown on sapphire substrate, it is shown that the GaN substrate is indeed of high quality, i.e., the lattice is relaxed. However the GaN substrate has a small enough but finite residual strain arising from the pileup of the lateral growth front on SiO2 masks in the course of LEO. It was also found that the elastic stiffness constants C13 and C44, are more sensitive to the residual strain than the optical phonon frequencies. The high frequency and static dielectric constants were found to be 5.14 and 9.04. The Born and Callen effective charges were found to be 2.56 and 0.50.

    元の言語English
    ページ(範囲)1860-1866
    ページ数7
    ジャーナルJournal of Applied Physics
    86
    発行部数4
    出版物ステータスPublished - 1999 8 15

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    spectroscopy
    stiffness
    sapphire
    x ray diffraction
    masks
    Raman spectroscopy
    infrared spectroscopy
    permittivity

    ASJC Scopus subject areas

    • Physics and Astronomy(all)
    • Physics and Astronomy (miscellaneous)

    これを引用

    Deguchi, T., Ichiryu, D., Toshikawa, K., Sekiguchi, K., Sota, T., Matsuo, R., ... Nakamura, S. (1999). Structural and vibrational properties of GaN. Journal of Applied Physics, 86(4), 1860-1866.

    Structural and vibrational properties of GaN. / Deguchi, T.; Ichiryu, D.; Toshikawa, K.; Sekiguchi, K.; Sota, Takayuki; Matsuo, R.; Azuhata, T.; Yamaguchi, M.; Yagi, T.; Chichibu, S.; Nakamura, S.

    :: Journal of Applied Physics, 巻 86, 番号 4, 15.08.1999, p. 1860-1866.

    研究成果: Article

    Deguchi, T, Ichiryu, D, Toshikawa, K, Sekiguchi, K, Sota, T, Matsuo, R, Azuhata, T, Yamaguchi, M, Yagi, T, Chichibu, S & Nakamura, S 1999, 'Structural and vibrational properties of GaN', Journal of Applied Physics, 巻. 86, 番号 4, pp. 1860-1866.
    Deguchi T, Ichiryu D, Toshikawa K, Sekiguchi K, Sota T, Matsuo R その他. Structural and vibrational properties of GaN. Journal of Applied Physics. 1999 8 15;86(4):1860-1866.
    Deguchi, T. ; Ichiryu, D. ; Toshikawa, K. ; Sekiguchi, K. ; Sota, Takayuki ; Matsuo, R. ; Azuhata, T. ; Yamaguchi, M. ; Yagi, T. ; Chichibu, S. ; Nakamura, S. / Structural and vibrational properties of GaN. :: Journal of Applied Physics. 1999 ; 巻 86, 番号 4. pp. 1860-1866.
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    abstract = "Structural and vibrational properties of device quality pure GaN substrate grown using a lateral epitaxial overgrowth (LEO) technique were studied using x-ray diffraction, Brillouin, Raman, and infrared spectroscopy. Lattice constants were found to be a = 3.1896±0.0002 {\AA} and c = 5.1855 ±0.0002 {\AA}. Comparing the results with those on GaN epilayer directly grown on sapphire substrate, it is shown that the GaN substrate is indeed of high quality, i.e., the lattice is relaxed. However the GaN substrate has a small enough but finite residual strain arising from the pileup of the lateral growth front on SiO2 masks in the course of LEO. It was also found that the elastic stiffness constants C13 and C44, are more sensitive to the residual strain than the optical phonon frequencies. The high frequency and static dielectric constants were found to be 5.14 and 9.04. The Born and Callen effective charges were found to be 2.56 and 0.50.",
    author = "T. Deguchi and D. Ichiryu and K. Toshikawa and K. Sekiguchi and Takayuki Sota and R. Matsuo and T. Azuhata and M. Yamaguchi and T. Yagi and S. Chichibu and S. Nakamura",
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    T1 - Structural and vibrational properties of GaN

    AU - Deguchi, T.

    AU - Ichiryu, D.

    AU - Toshikawa, K.

    AU - Sekiguchi, K.

    AU - Sota, Takayuki

    AU - Matsuo, R.

    AU - Azuhata, T.

    AU - Yamaguchi, M.

    AU - Yagi, T.

    AU - Chichibu, S.

    AU - Nakamura, S.

    PY - 1999/8/15

    Y1 - 1999/8/15

    N2 - Structural and vibrational properties of device quality pure GaN substrate grown using a lateral epitaxial overgrowth (LEO) technique were studied using x-ray diffraction, Brillouin, Raman, and infrared spectroscopy. Lattice constants were found to be a = 3.1896±0.0002 Å and c = 5.1855 ±0.0002 Å. Comparing the results with those on GaN epilayer directly grown on sapphire substrate, it is shown that the GaN substrate is indeed of high quality, i.e., the lattice is relaxed. However the GaN substrate has a small enough but finite residual strain arising from the pileup of the lateral growth front on SiO2 masks in the course of LEO. It was also found that the elastic stiffness constants C13 and C44, are more sensitive to the residual strain than the optical phonon frequencies. The high frequency and static dielectric constants were found to be 5.14 and 9.04. The Born and Callen effective charges were found to be 2.56 and 0.50.

    AB - Structural and vibrational properties of device quality pure GaN substrate grown using a lateral epitaxial overgrowth (LEO) technique were studied using x-ray diffraction, Brillouin, Raman, and infrared spectroscopy. Lattice constants were found to be a = 3.1896±0.0002 Å and c = 5.1855 ±0.0002 Å. Comparing the results with those on GaN epilayer directly grown on sapphire substrate, it is shown that the GaN substrate is indeed of high quality, i.e., the lattice is relaxed. However the GaN substrate has a small enough but finite residual strain arising from the pileup of the lateral growth front on SiO2 masks in the course of LEO. It was also found that the elastic stiffness constants C13 and C44, are more sensitive to the residual strain than the optical phonon frequencies. The high frequency and static dielectric constants were found to be 5.14 and 9.04. The Born and Callen effective charges were found to be 2.56 and 0.50.

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