Structural and vibrational properties of GaN

T. Deguchi, D. Ichiryu, K. Toshikawa, K. Sekiguchi, T. Sota, R. Matsuo, T. Azuhata, M. Yamaguchi, T. Yagi, S. Chichibu, S. Nakamura

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Structural and vibrational properties of device quality pure GaN substrate grown using a lateral epitaxial overgrowth (LEO) technique were studied using x-ray diffraction, Brillouin, Raman, and infrared spectroscopy. Lattice constants were found to be a = 3.1896±0.0002 Å and c = 5.1855 ±0.0002 Å. Comparing the results with those on GaN epilayer directly grown on sapphire substrate, it is shown that the GaN substrate is indeed of high quality, i.e., the lattice is relaxed. However the GaN substrate has a small enough but finite residual strain arising from the pileup of the lateral growth front on SiO2 masks in the course of LEO. It was also found that the elastic stiffness constants C13 and C44, are more sensitive to the residual strain than the optical phonon frequencies. The high frequency and static dielectric constants were found to be 5.14 and 9.04. The Born and Callen effective charges were found to be 2.56 and 0.50.

元の言語English
ページ(範囲)1860-1866
ページ数7
ジャーナルJournal of Applied Physics
86
発行部数4
DOI
出版物ステータスPublished - 1999 8 15

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

これを引用

Deguchi, T., Ichiryu, D., Toshikawa, K., Sekiguchi, K., Sota, T., Matsuo, R., Azuhata, T., Yamaguchi, M., Yagi, T., Chichibu, S., & Nakamura, S. (1999). Structural and vibrational properties of GaN. Journal of Applied Physics, 86(4), 1860-1866. https://doi.org/10.1063/1.370980