Structural Change in Ag2Te Buffer Layer During Two-Step Closed Space Sublimation of AgGaTe2

Y. Yu*, M. Kobayashi

*この研究の対応する著者

研究成果: Article査読

抄録

An AgGaTe2 layer was prepared using an Ag2Te buffer layer. Ag2Te layers were deposited by the radio-frequency sputtering method. We investigate the variations in the Ag2Te buffer layer surface morphology and composition that take place during annealing. Ag2Te films were annealed in a tube furnace. The composition and surface morphology of the Ag2Te layer were found to vary depending on the thermal annealing temperature and duration. It was confirmed that a dewetting process in the Ag2Te layer occurred with annealing between 200°C and 500°C, and O2 and Mo reacted at 600°C and then became MoO3 compounds. Mo and Te were completely desorbed from the surface at 700°C. This confirmed that the surface morphology of the Ag2Te layer was controlled by the annealing temperature and duration.

本文言語English
ページ(範囲)7541-7546
ページ数6
ジャーナルJournal of Electronic Materials
49
12
DOI
出版ステータスPublished - 2020 12月

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

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