抄録
An AgGaTe2 layer was prepared using an Ag2Te buffer layer. Ag2Te layers were deposited by the radio-frequency sputtering method. We investigate the variations in the Ag2Te buffer layer surface morphology and composition that take place during annealing. Ag2Te films were annealed in a tube furnace. The composition and surface morphology of the Ag2Te layer were found to vary depending on the thermal annealing temperature and duration. It was confirmed that a dewetting process in the Ag2Te layer occurred with annealing between 200°C and 500°C, and O2 and Mo reacted at 600°C and then became MoO3 compounds. Mo and Te were completely desorbed from the surface at 700°C. This confirmed that the surface morphology of the Ag2Te layer was controlled by the annealing temperature and duration.
本文言語 | English |
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ページ(範囲) | 7541-7546 |
ページ数 | 6 |
ジャーナル | Journal of Electronic Materials |
巻 | 49 |
号 | 12 |
DOI | |
出版ステータス | Published - 2020 12月 |
ASJC Scopus subject areas
- 電子材料、光学材料、および磁性材料
- 凝縮系物理学
- 電子工学および電気工学
- 材料化学