Structural change induced in LaAlO3 by ion implantation

Masayuki Harima, Yosuke Horii, Takaaki Morimoto, Yoshimichi Ohki

    研究成果: Conference contribution

    1 引用 (Scopus)

    抄録

    Ion implantation is used for various purposes in manufacturing semiconductor devices such as MOS-FETs. In the present study, effects of implantation of P+ or B+ ions on the structural change of single crystal LaAlO3 were examined. The optical absorption edge located at about 5.6 eV, which corresponds to the band gap energy of LaAlO 3, is scarcely affected by the ion implantation. The X-ray diffraction peak intensity at 2θ= 23.5° is decreased by the ion implantation. The intensities of three sharp photoluminescence (PL) peaks detected at 1.62, 1.65, and 1.69 eV, which appear only when the samples are crystalline, become smaller by ion implantation. However, the intensity of a broad PL peak at around 2.8 eV due to the oxygen vacancy, which is also detectable in amorphous samples, scarcely changes after the ion implantation. These results indicate that the ion implantation degrades the crystalline LaAlO3. However, as compared with YAlO3 with a similar perovskite structure, LaAlO3 is more resistant to ion implantation.

    元の言語English
    ホスト出版物のタイトルProceedings of the International Symposium on Electrical Insulating Materials
    出版者Institute of Electrical Engineers of Japan
    ページ180-183
    ページ数4
    ISBN(印刷物)9784886860866
    DOI
    出版物ステータスPublished - 2014
    イベント2014 International Symposium on Electrical Insulating Materials, ISEIM 2014 - Niigata
    継続期間: 2014 6 12014 6 5

    Other

    Other2014 International Symposium on Electrical Insulating Materials, ISEIM 2014
    Niigata
    期間14/6/114/6/5

    Fingerprint

    Ion implantation
    Photoluminescence
    Crystalline materials
    Oxygen vacancies
    Semiconductor devices
    Field effect transistors
    Light absorption
    Perovskite
    Energy gap
    Single crystals
    Ions
    X ray diffraction

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Electronic, Optical and Magnetic Materials

    これを引用

    Harima, M., Horii, Y., Morimoto, T., & Ohki, Y. (2014). Structural change induced in LaAlO3 by ion implantation. : Proceedings of the International Symposium on Electrical Insulating Materials (pp. 180-183). [6870748] Institute of Electrical Engineers of Japan. https://doi.org/10.1109/ISEIM.2014.6870748

    Structural change induced in LaAlO3 by ion implantation. / Harima, Masayuki; Horii, Yosuke; Morimoto, Takaaki; Ohki, Yoshimichi.

    Proceedings of the International Symposium on Electrical Insulating Materials. Institute of Electrical Engineers of Japan, 2014. p. 180-183 6870748.

    研究成果: Conference contribution

    Harima, M, Horii, Y, Morimoto, T & Ohki, Y 2014, Structural change induced in LaAlO3 by ion implantation. : Proceedings of the International Symposium on Electrical Insulating Materials., 6870748, Institute of Electrical Engineers of Japan, pp. 180-183, 2014 International Symposium on Electrical Insulating Materials, ISEIM 2014, Niigata, 14/6/1. https://doi.org/10.1109/ISEIM.2014.6870748
    Harima M, Horii Y, Morimoto T, Ohki Y. Structural change induced in LaAlO3 by ion implantation. : Proceedings of the International Symposium on Electrical Insulating Materials. Institute of Electrical Engineers of Japan. 2014. p. 180-183. 6870748 https://doi.org/10.1109/ISEIM.2014.6870748
    Harima, Masayuki ; Horii, Yosuke ; Morimoto, Takaaki ; Ohki, Yoshimichi. / Structural change induced in LaAlO3 by ion implantation. Proceedings of the International Symposium on Electrical Insulating Materials. Institute of Electrical Engineers of Japan, 2014. pp. 180-183
    @inproceedings{cbbd04a0c85345dbb137e85d5e68f8a0,
    title = "Structural change induced in LaAlO3 by ion implantation",
    abstract = "Ion implantation is used for various purposes in manufacturing semiconductor devices such as MOS-FETs. In the present study, effects of implantation of P+ or B+ ions on the structural change of single crystal LaAlO3 were examined. The optical absorption edge located at about 5.6 eV, which corresponds to the band gap energy of LaAlO 3, is scarcely affected by the ion implantation. The X-ray diffraction peak intensity at 2θ= 23.5° is decreased by the ion implantation. The intensities of three sharp photoluminescence (PL) peaks detected at 1.62, 1.65, and 1.69 eV, which appear only when the samples are crystalline, become smaller by ion implantation. However, the intensity of a broad PL peak at around 2.8 eV due to the oxygen vacancy, which is also detectable in amorphous samples, scarcely changes after the ion implantation. These results indicate that the ion implantation degrades the crystalline LaAlO3. However, as compared with YAlO3 with a similar perovskite structure, LaAlO3 is more resistant to ion implantation.",
    keywords = "Impurity, Ion implantation, Photoluminescence, X-ray diffraction",
    author = "Masayuki Harima and Yosuke Horii and Takaaki Morimoto and Yoshimichi Ohki",
    year = "2014",
    doi = "10.1109/ISEIM.2014.6870748",
    language = "English",
    isbn = "9784886860866",
    pages = "180--183",
    booktitle = "Proceedings of the International Symposium on Electrical Insulating Materials",
    publisher = "Institute of Electrical Engineers of Japan",

    }

    TY - GEN

    T1 - Structural change induced in LaAlO3 by ion implantation

    AU - Harima, Masayuki

    AU - Horii, Yosuke

    AU - Morimoto, Takaaki

    AU - Ohki, Yoshimichi

    PY - 2014

    Y1 - 2014

    N2 - Ion implantation is used for various purposes in manufacturing semiconductor devices such as MOS-FETs. In the present study, effects of implantation of P+ or B+ ions on the structural change of single crystal LaAlO3 were examined. The optical absorption edge located at about 5.6 eV, which corresponds to the band gap energy of LaAlO 3, is scarcely affected by the ion implantation. The X-ray diffraction peak intensity at 2θ= 23.5° is decreased by the ion implantation. The intensities of three sharp photoluminescence (PL) peaks detected at 1.62, 1.65, and 1.69 eV, which appear only when the samples are crystalline, become smaller by ion implantation. However, the intensity of a broad PL peak at around 2.8 eV due to the oxygen vacancy, which is also detectable in amorphous samples, scarcely changes after the ion implantation. These results indicate that the ion implantation degrades the crystalline LaAlO3. However, as compared with YAlO3 with a similar perovskite structure, LaAlO3 is more resistant to ion implantation.

    AB - Ion implantation is used for various purposes in manufacturing semiconductor devices such as MOS-FETs. In the present study, effects of implantation of P+ or B+ ions on the structural change of single crystal LaAlO3 were examined. The optical absorption edge located at about 5.6 eV, which corresponds to the band gap energy of LaAlO 3, is scarcely affected by the ion implantation. The X-ray diffraction peak intensity at 2θ= 23.5° is decreased by the ion implantation. The intensities of three sharp photoluminescence (PL) peaks detected at 1.62, 1.65, and 1.69 eV, which appear only when the samples are crystalline, become smaller by ion implantation. However, the intensity of a broad PL peak at around 2.8 eV due to the oxygen vacancy, which is also detectable in amorphous samples, scarcely changes after the ion implantation. These results indicate that the ion implantation degrades the crystalline LaAlO3. However, as compared with YAlO3 with a similar perovskite structure, LaAlO3 is more resistant to ion implantation.

    KW - Impurity

    KW - Ion implantation

    KW - Photoluminescence

    KW - X-ray diffraction

    UR - http://www.scopus.com/inward/record.url?scp=84906539745&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=84906539745&partnerID=8YFLogxK

    U2 - 10.1109/ISEIM.2014.6870748

    DO - 10.1109/ISEIM.2014.6870748

    M3 - Conference contribution

    AN - SCOPUS:84906539745

    SN - 9784886860866

    SP - 180

    EP - 183

    BT - Proceedings of the International Symposium on Electrical Insulating Materials

    PB - Institute of Electrical Engineers of Japan

    ER -