Structural changes in Ge-doped SiO2 planar waveguides induced by ultraviolet photons

S. Shimoto*, M. Fujimaki, N. Miyazaki, Y. Nishihara, Y. Ohki, K. Imamura, K. Terasawa

*この研究の対応する著者

研究成果: Paper査読

抄録

The effect of thermal annealing in oxygen atmosphere on the glass structure of Ge-doped SiO2 waveguides synthesized by chemical vapor deposition (CVD) or flame hydrolysis deposition (FHD) is investigated. In the CVD method, the thermal annealing in oxygen atmosphere makes the distribution of Ge uniform and improves the quality of the doped layer. The irradiation of ultraviolet photons to the CVD sample induces the paramagnetic centers. In the second sample, paramagnetic centers are not induced by irradiation of ultraviolet (UV) photons.

本文言語English
ページ47-50
ページ数4
出版ステータスPublished - 1998 12 1
イベントProceedings of the 1998 International Symposium on Electrical Insulating Materials - Toyohashi, Jpn
継続期間: 1998 9 271998 9 30

Other

OtherProceedings of the 1998 International Symposium on Electrical Insulating Materials
CityToyohashi, Jpn
Period98/9/2798/9/30

ASJC Scopus subject areas

  • 工学(全般)
  • 材料科学(全般)

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