Structural characterization of AgGaTe2 layers grown on a- and c-sapphire substrates by a closed space sublimation method

Aya Uruno, Ayaka Usui, Masakazu Kobayashi

    研究成果: Article

    3 引用 (Scopus)

    抄録

    AgGaTe2 layers were grown on a- and c-plane sapphire substrates by a closed space sublimation method with varying the source temperature. Grown films were evaluated by θ -2θ and pole figure measurements of X-ray diffraction. AgGaTe2 layers were grown to have strong preference for the (103) orientation. However, it was cleared the Ag5Te3 was formed along with the AgGaTe2 when the layer was grown on c-plane sapphire. The orientation of the film was analyzed by using the pole figure, and resulted in AgGaTe2 without Ag5Te3 layers could be grown on a-plane sapphire. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

    元の言語English
    ページ(範囲)1186-1189
    ページ数4
    ジャーナルPhysica Status Solidi (C) Current Topics in Solid State Physics
    11
    発行部数7-8
    DOI
    出版物ステータスPublished - 2014

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    sublimation
    sapphire
    poles
    diffraction
    x rays
    temperature

    ASJC Scopus subject areas

    • Condensed Matter Physics

    これを引用

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    abstract = "AgGaTe2 layers were grown on a- and c-plane sapphire substrates by a closed space sublimation method with varying the source temperature. Grown films were evaluated by θ -2θ and pole figure measurements of X-ray diffraction. AgGaTe2 layers were grown to have strong preference for the (103) orientation. However, it was cleared the Ag5Te3 was formed along with the AgGaTe2 when the layer was grown on c-plane sapphire. The orientation of the film was analyzed by using the pole figure, and resulted in AgGaTe2 without Ag5Te3 layers could be grown on a-plane sapphire. ({\circledC} 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)",
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    T1 - Structural characterization of AgGaTe2 layers grown on a- and c-sapphire substrates by a closed space sublimation method

    AU - Uruno, Aya

    AU - Usui, Ayaka

    AU - Kobayashi, Masakazu

    PY - 2014

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    N2 - AgGaTe2 layers were grown on a- and c-plane sapphire substrates by a closed space sublimation method with varying the source temperature. Grown films were evaluated by θ -2θ and pole figure measurements of X-ray diffraction. AgGaTe2 layers were grown to have strong preference for the (103) orientation. However, it was cleared the Ag5Te3 was formed along with the AgGaTe2 when the layer was grown on c-plane sapphire. The orientation of the film was analyzed by using the pole figure, and resulted in AgGaTe2 without Ag5Te3 layers could be grown on a-plane sapphire. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

    AB - AgGaTe2 layers were grown on a- and c-plane sapphire substrates by a closed space sublimation method with varying the source temperature. Grown films were evaluated by θ -2θ and pole figure measurements of X-ray diffraction. AgGaTe2 layers were grown to have strong preference for the (103) orientation. However, it was cleared the Ag5Te3 was formed along with the AgGaTe2 when the layer was grown on c-plane sapphire. The orientation of the film was analyzed by using the pole figure, and resulted in AgGaTe2 without Ag5Te3 layers could be grown on a-plane sapphire. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

    KW - Chalcopyrite

    KW - Closed space sublimation

    KW - Pole figure

    KW - Sapphire

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