Structural characterization of silicon carbide etched by using a combination of ion implantation and wet chemical etching

T. Henkel, G. Ferro, S. Nishizawa, H. Pressler, Y. Tanaka, H. Tanoue, Naoto Kobayashi

研究成果: Chapter

1 被引用数 (Scopus)

抄録

Silicon carbide has been etched using a combination of high-dose ion implantation and wet chemical etching. Structural properties with respect to the remaining damage after etching have been studied using atomic force microscopy, Rutherford backscattering/channeling, and Raman spectroscopy. No significant deterioration of the crystal quality has been found after the etching process. Moreover, the as-etched surface is characterized by a lower roughness compared to virgin material. The results demonstrate that this etching method can be used for the fabrication of contacts on silicon carbide surfaces.

本文言語English
ホスト出版物のタイトルMaterials Science Forum
出版社Trans Tech Publ Ltd
338
出版ステータスPublished - 2000
外部発表はい
イベントICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA
継続期間: 1999 10 101999 10 15

Other

OtherICSCRM '99: The International Conference on Silicon Carbide and Related Materials
CityResearch Triangle Park, NC, USA
Period99/10/1099/10/15

ASJC Scopus subject areas

  • Materials Science(all)

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