Structural defects in amorphous silicon oxynitride and silicon nitride

Amorphous silicon oxynitride and silicon nitride have been gaining each important position as a material used in electronic and optoelectronic devices. The present paper gives a review of structural defects in these materials, focusing on their characterization by photoluminescence and electron spin resonance. Some typical effects induced in these materials by the presence of hydrogen, the irradiation of ultraviolet photons and application of a high electric field are also discussed.