Structural defects in Sr0.7Bi2.3Ta2O9 thin film for ferroelectric memory

Tetsuya Osaka*, Sachiko Ono, Akira Sakakibara, Ichiro Koiw

*この研究の対応する著者

研究成果: Article査読

4 被引用数 (Scopus)

抄録

Using transmission electron microscopy (TEM), we studied structural defects in a Sr0.7Bi2.3TA2O9 (SBT) thin film to be used for ferroelectric memory devices. We examined the effects of the substrate, crystal continuity, and dislocations in crystals as major causes of defects. For this study, we used an SBT thin film grown from an alkoxide solution. Since crystal growth was hardly influenced by the substrate, the substrate had little influence on the occurrence of defects resulted in misfit of lattice constant. Regions of partially low crystal continuity were observed in the SBT thin film. In these regions, the orientation was still uniform, but the continuity of the crystal grain was low because of the defects. In addition, variation in contrast was observed in the crystals, however, no obvious variation in chemical composition was found in this region of varying contrast. Therefore, the contrast variation is considered to be attributed to the dislocation. Such a dislocation was found to be occurred in the direction of the (2(MO) plane in many instances. The defects in the SBT film were also confirmed by the TEM observation.

本文言語English
ページ(範囲)545-550
ページ数6
ジャーナルIEICE Transactions on Electronics
E81-C
4
出版ステータスPublished - 1998

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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