Structural defects of cubic InGaN/GaN heterostructure grown on GaAs(001) substrate by MOVPE

Y. Taniyasu, Y. Watanabe, D. H. Lim, A. W. Jia, M. Shimotomai, Y. Kato, M. Kobayashi, A. Yoshikawa, K. Takahashi

研究成果: Conference article査読

4 被引用数 (Scopus)

抄録

Cubic InGaN/GaN heterostructures were grown on GaAs(001) substrates by MOVPE. X-ray reciprocal space mapping (RSM) measurements were used to investigate the structural defects. It was revealed that the cubic InGaN layers contained high density stacking faults parallel to the cubic InGaN {111} planes, and hexagonal domains with their c-axes parallel to the cubic InGaN 〈111〉 directions. The hexagonal domains were preferentially oriented to the cubic InGaN 〈111〉A directions rather than the 〈111〉B directions. It was clarified that the cubic InGaN layer was anisotropically strained, and this would be originated from the anisotropic mixing of the hexagonal phase in the cubic InGaN epilayers.

本文言語English
ページ(範囲)397-400
ページ数4
ジャーナルPhysica Status Solidi (A) Applied Research
176
1
DOI
出版ステータスPublished - 1999 11 1
外部発表はい
イベントProceedings of the 1999 3rd International Conference on Nitride Semiconductors (ICNS'99) - Montpellier, France
継続期間: 1999 7 41999 7 9

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

フィンガープリント 「Structural defects of cubic InGaN/GaN heterostructure grown on GaAs(001) substrate by MOVPE」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル