Structural, magnetic and barrier properties for Co-ferrite thin films fabricated by plasma oxidization

Ryota Goto*, Yukiko Takahashi, Nobuki Tezuka, Koichiro Inomata, Satoshi Sugimoto, Kazuhiro Hono

*この研究の対応する著者

研究成果: Article査読

1 被引用数 (Scopus)

抄録

We have investigated the structural, magnetic and barrier properties for Co-ferrite thin films, which have been formed by plasma oxidization of the surface of Co33Fe67 (CoFe2) underlayer deposited on MgO(001) single crystal substrates. XRD patterns and cross sectional TEM observation revealed that the Co-ferrite thin films grew epitaxially with the (001) orientations on (001)-oriented CoFe2 underlayer. The saturation magnetization of CoFe2 and Co-ferrite annealed at 523 K were 1.5 Wbm-2 and 0.44 Wbm-2, respectively. Magnetizations of these two layers were rotated simultaneously. Coercivity increased up to near 80 kAm-1 after postannealing. To evaluate barrier properties of Co-ferrite, we have fabricated magnetic tunnel junctions (MTJs) consisting of CoFe2/Co-ferrite/Ta on MgO(001) single crystal substrates through microfabrication technique. These MTJs exhibited the non-linear current density(J)-voltage(V) curves, revealing that Co-ferrite thin films acted as a barrier.

本文言語English
ページ(範囲)258-262
ページ数5
ジャーナルNippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals
71
2
DOI
出版ステータスPublished - 2007 2
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 材料力学
  • 金属および合金
  • 材料化学

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