Structural stabilization induced by oxygen plasma post-exposure of SiO2 films deposited from tetraethoxysilane

Takashi Noma*, Takaharu Sugiura, Keisuke Ishii, Yoshimichi Ohki, Yoshimasa Hama

*この研究の対応する著者

研究成果: Article査読

5 被引用数 (Scopus)

抄録

Structural changes induced by post-exposure to oxygen plasma were studied for SiO2 films deposited at low temperatures (200-600°C) by plasma-enhanced chemical vapour deposition from tetraethoxysilane. Carbon- and water-related impurities remaining in the film are decomposed by the oxygen plasma and then disappear. This brings about the disappearance of micropores and structural consolidation and stabilization, through which the degree of waterproofing improves, the relative dielectric constant decreases and the absorption edge shifts towards a higher energy.

本文言語English
ページ(範囲)937-943
ページ数7
ジャーナルJournal of Physics D: Applied Physics
30
6
DOI
出版ステータスPublished - 1997 3月 21

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 音響学および超音波学
  • 表面、皮膜および薄膜

フィンガープリント

「Structural stabilization induced by oxygen plasma post-exposure of SiO2 films deposited from tetraethoxysilane」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル