Structure and thermophysical properties of GaN films deposited by reactive sputtering using a metal Ga target

Engineering & Materials Science

• Atoms 21%
• Diffraction patterns 10%
• Electron diffraction 9%
• Epitaxial films 10%
• Epitaxial growth 9%
• Gas mixtures 23%
• Heat conduction 7%
• Heating 5%
• Impurities 61%
• Magnetron sputtering 9%
• Metals 40%
• Oxygen 5%
• Poles 6%
• Reactive sputtering 100%
• Sapphire 18%
• Sputtering 9%
• Substrates 19%
• Thermal conductivity 25%
• Thermodynamic properties 58%
• Thick films 25%
• Thin films 19%

Chemical Compounds

• Dioxygen 6%
• Gas 26%
• Liquid Film 30%
• Magnetron Sputtering 14%
• Metal 28%
• Mixture 16%
• Reactive Sputtering 94%
• Reduction 5%
• Selected Area Electron Diffraction 14%
• Sputtering 13%
• Thermal Conductivity 59%
• Thermodynamic Property 56%

Physics & Astronomy

• atoms 10%
• breakdown 5%
• conductive heat transfer 6%
• curves 7%
• diffraction patterns 5%
• direct current 5%
• electron diffraction 5%
• gas mixtures 19%
• impurities 41%
• magnetron sputtering 5%
• metals 32%
• poles 6%
• sapphire 11%
• sputtering 49%
• thermal conductivity 22%
• thermophysical properties 71%
• thick films 19%
• thin films 10%