Structure of the ZnSe/GaAs heteroepitaxial interface

D. Li, J. M. Gonsalves, N. Otsuka, J. Qiu, M. Kobayashi, R. L. Gunshor

研究成果: Article査読

87 被引用数 (Scopus)

抄録

Interfaces of pseudomorphic (100) ZnSe/GaAs heterostructures grown by molecular beam epitaxy have been studied by transmission electron microscopy. The observation of three different heterostructures suggests the existence of a transition structure at the ZnSe/GaAs interfaces which have formed on As-deficient GaAs surfaces. The transition structure appears as a bright line in dark field images of the 200 reflection, while it becomes a dark line in dark field images of the 400 reflection. These observations are explained by assuming the existence of an interface layer which has a zinc blende type structure having vacancies in one of the face centered cubic sublattices.

本文言語English
ページ(範囲)449-451
ページ数3
ジャーナルApplied Physics Letters
57
5
DOI
出版ステータスPublished - 1990 12 1
外部発表はい

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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