Study of current induced magnetic domain wall movement with extremely low energy consumption by micromagnetic simulation

K. Kawabata, M. Tanizawa, K. Ishikawa, Y. Inoue, M. Inuishi, T. Nishimura

研究成果: Conference contribution

2 引用 (Scopus)

抜粋

We study the velocity and energy consumption of current induced magnetic domain wall (DW) movement, which is a new paradigm in spintronics devices such as a next generation MRAM and race track memory, by LLG (Landau-Lifshitz- Gilbert) micromagnetic simulation. It is found that DW velocity is almost the same in current in magnetic thin film plane(CIP) and current perpendicular to plane (CPP-Perp.). On the other hand, the energy consumption is much lower in CPP-Perp. than CIP. These results show that the CPP-Perp. structure has potential solutions for high speed and low energy consumption applications.

元の言語English
ホスト出版物のタイトル2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011
ページ55-58
ページ数4
DOI
出版物ステータスPublished - 2011 11 1
外部発表Yes
イベント2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011 - Osaka, Japan
継続期間: 2011 9 82011 9 10

出版物シリーズ

名前International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Conference

Conference2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011
Japan
Osaka
期間11/9/811/9/10

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Science Applications
  • Modelling and Simulation

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  • これを引用

    Kawabata, K., Tanizawa, M., Ishikawa, K., Inoue, Y., Inuishi, M., & Nishimura, T. (2011). Study of current induced magnetic domain wall movement with extremely low energy consumption by micromagnetic simulation. : 2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011 (pp. 55-58). [6035048] (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). https://doi.org/10.1109/SISPAD.2011.6035048