Study of current induced magnetic domain wall movement with extremely low energy consumption by micromagnetic simulation

K. Kawabata*, M. Tanizawa, K. Ishikawa, Y. Inoue, M. Inuishi, T. Nishimura

*この研究の対応する著者

研究成果: Conference contribution

3 被引用数 (Scopus)

抄録

We study the velocity and energy consumption of current induced magnetic domain wall (DW) movement, which is a new paradigm in spintronics devices such as a next generation MRAM and race track memory, by LLG (Landau-Lifshitz- Gilbert) micromagnetic simulation. It is found that DW velocity is almost the same in current in magnetic thin film plane(CIP) and current perpendicular to plane (CPP-Perp.). On the other hand, the energy consumption is much lower in CPP-Perp. than CIP. These results show that the CPP-Perp. structure has potential solutions for high speed and low energy consumption applications.

本文言語English
ホスト出版物のタイトル2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011
ページ55-58
ページ数4
DOI
出版ステータスPublished - 2011 11月 1
外部発表はい
イベント2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011 - Osaka, Japan
継続期間: 2011 9月 82011 9月 10

出版物シリーズ

名前International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Conference

Conference2011 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2011
国/地域Japan
CityOsaka
Period11/9/811/9/10

ASJC Scopus subject areas

  • 電子工学および電気工学
  • コンピュータ サイエンスの応用
  • モデリングとシミュレーション

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