Study of defects in silicon dioxide films on Si(100) by a variable-energy positron beam

M. Fujinami*, N. B. Chilton, K. Ishii, Y. Ohki

*この研究の対応する著者

研究成果: Article査読

8 被引用数 (Scopus)

抄録

Amorphous SiO2 films grown by both thermal oxidation and plasma chemical vapor deposition (CVD) in a tetraethylorthosilicate and O2 atmosphere were studied using variable-energy positron annihilation spectroscopy and infrared (IR) spectroscopy. For thermally grown SiO2 layers with growth temperatures of over 1000 °C it was found that the measured Doppler broadening parameter was identical for both wet and dry growth atmospheres. The measured Doppler broadening parameter in the case of SiO2 prepared by plasma CVD was found to be strongly influenced by the substrate temperature during deposition. For a substrate growth temperature of 600 °C, the data are essentially identical to those of the thermally grown oxide layers. IR analysis revealed that the concentration of Si-OH in the SiO2 layer is affected by the substrate temperature during growth. The level of the Doppler broadening parameter in the SiO2 film exhibited changes that can be correlated with this Si-OH concentration. We thus show that the concentration of Si-OH in amorphous SiO2 film is a factor that may affect the Doppler broadening parameter.

本文言語English
ページ(範囲)5406-5409
ページ数4
ジャーナルJournal of Applied Physics
74
9
DOI
出版ステータスPublished - 1993

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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