The electronic properties of Ge0.9Si0.1 are investigated by cyclotron resonance, optical absorption, and galvanomagnetic measurements. The cyclotron effective masses are determined for light and heavy holes and interpreted using the band structure theories of group IV semiconductors including the subband interaction. The temperature dependence of the mobility of holes is obtained both by Hall effect and cyclotron resonance. The optical phonon energy involved in the indirect transition is also obtained by intrinsic absorption spectra.
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