Study of energy band parameters in p‐type Ge0.9Si0.1 alloys

K. Takeda*, Y. Maeda, E. Ohta, M. Sakata, G. Kido, N. Miura

*この研究の対応する著者

研究成果: Article査読

3 被引用数 (Scopus)

抄録

The electronic properties of Ge0.9Si0.1 are investigated by cyclotron resonance, optical absorption, and galvanomagnetic measurements. The cyclotron effective masses are determined for light and heavy holes and interpreted using the band structure theories of group IV semiconductors including the subband interaction. The temperature dependence of the mobility of holes is obtained both by Hall effect and cyclotron resonance. The optical phonon energy involved in the indirect transition is also obtained by intrinsic absorption spectra.

本文言語English
ページ(範囲)369-379
ページ数11
ジャーナルphysica status solidi (b)
115
2
DOI
出版ステータスPublished - 1983 2 1
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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