Study of free GaAs surfaces using a back-gated undoped GaAs/AlGaAs heterostructure

A. Kawaharazuka, T. Saku, C. A. Kikuchi, Y. Horikoshi, Y. Hirayama

研究成果: Article査読

7 被引用数 (Scopus)

抄録

We study the free GaAs surface by using a back-gated undoped AlGaAs/GaAs heterostructure. This structure is suitable for investigating this surface since a two-dimensional electron gas is induced by the back-gate bias in the undoped heterostructure. We compare the channel depth dependence of the transport characteristics with two different models of the free GaAs: the 'mid-gap pinning model', which assumes a constant surface Fermi level, and an alternative approach called the 'frozen surface model', which assumes a constant surface charge density. The experimental results indicate that the frozen surface model appropriately describes free GaAs surfaces at low temperature in spite of the fact that the characteristics deviate from this model at higher temperature or for a shallow channel.

本文言語English
ページ(範囲)663-666
ページ数4
ジャーナルPhysica E: Low-Dimensional Systems and Nanostructures
13
2-4
DOI
出版ステータスPublished - 2002 3

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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