Study of high power generation in UTC-PD at 110-210 GHz

Toshimasa Umezawa, Atsushi Kanno, Kouichi Akahane, Atsushi Matsumoto, Naokatsu Yamamoto, Tetsuya Kawanishi

研究成果: Conference contribution

3 被引用数 (Scopus)

抄録

We designed and fabricated a low-bias operational uni-travelling carrier photodiode (UTC-PD) structure, which can be operated at over 100 GHz. The main structure of the device consisted of p-doped InGaAs for the photo-absorption layer and non-doped InP for the carrier collector layer, to obtain both a high electron drift velocity at a low bias and a small CR time constant based on the pn-junction capacitance. Through an on-wafer probing test, the frequency response was measured up to 210 GHz using a 1 mm coaxial connecter type (DC-110GHz), W-band (75-110 GHz) and G-band (140-220 GHz) waveguide probe with a spectrum analyzer. In the measurement results, a large bandwidth of 10 MHz-110 GHz could be obtained with good flatness within ±1 dB. When the W-band and G-band performance were characterized, the high-power characteristic of -3.8 dBm could be achieved at 106 GHz. and the output power level of - 19.8 dBm could be confirmed at 210 GHz as well.

本文言語English
ホスト出版物のタイトルTerahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XI
編集者Laurence P. Sadwick, Tianxin Yang
出版社SPIE
ISBN(電子版)9781510615472
DOI
出版ステータスPublished - 2018
イベント2017 Conference on Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XI - San Francisco, United States
継続期間: 2018 1月 292018 2月 1

出版物シリーズ

名前Proceedings of SPIE - The International Society for Optical Engineering
10531
ISSN(印刷版)0277-786X
ISSN(電子版)1996-756X

Other

Other2017 Conference on Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XI
国/地域United States
CitySan Francisco
Period18/1/2918/2/1

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • コンピュータ サイエンスの応用
  • 応用数学
  • 電子工学および電気工学

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