Study of ion-beam-induced epitaxy in Si by slow positron annihilation and RBS channeling

N. Hayashi*, R. Suzuki, H. Watanabe, I. Sakamoto, Naoto Kobayashi, T. Mikado, T. Yamazaki, K. Kuriyama

*この研究の対応する著者

研究成果: Article査読

2 被引用数 (Scopus)

抄録

RBS channeling analysis and positron annihilation measurements were used to study ion beam induced crystallization in silicon. The epitaxial regrowth of amorphous surface layers in 〈100〉 oriented Si substrate has been performed under irradiation with 400 keV Ar+ ions at the temperature of 400°C. A slow positron pulsing system was used to measure lifetime spectra in the recrystallised near-surface region, and the lifetime was found to increase by 40-70 ps, compared to the as-amorphized state, whereas RBS channeling shows a crystalline recovery from the amorphous structure. The results indicate that vacancy migration and clustering are promoted during the epitaxial recrystallization.

本文言語English
ページ(範囲)1006-1009
ページ数4
ジャーナルNuclear Inst. and Methods in Physics Research, B
80-81
PART 2
DOI
出版ステータスPublished - 1993
外部発表はい

ASJC Scopus subject areas

  • 表面、皮膜および薄膜
  • 器械工学
  • 表面および界面

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