Study of Low-residual Stress Amorphous Film Deposition Method for LiTaO3/Quartz or LiNbO3/Quartz Bonding toward 5G Surface Acoustic Wave Devices

Ami Tezuka, Hiroyuki Kuwae, Kosuke Yamada, Shuichi Shoji, Shoji Kakio, Jun Mizuno

研究成果: Conference contribution

抄録

LiTaO3 (LT) or LiNbO3 (LN)/Quartz bonded substrates with an amorphous intermediate layer were proposed to achieve both a large surface acoustic wave (SAW) velocity and a smaller temperature coefficient of frequency. Residual stress reduction of the amorphous film is expected to improve the bonding strength of a SAW substrate. In this report, we studied a method of low-residual stress amorphous film deposition for LT or LN/Quartz bonding. The residual stress of the LT substrate with an amorphous SiO2 or Al2O3 film deposited by ion beam sputtering, electron cyclotron resonance sputtering, and atomic layer deposition was evaluated. The LT substrate with the amorphous Al2O3 film deposited by ALD had the minimum warpage (-0.152 μm) and residual stress (127.3 MPa). The residual stress of the Al2O3 film deposited by ALD might be reduced because almost the same thickness of the Al2O3 film was deposited on both sides of the LT substrate at the same time. The maximum bonding strength of 3.7 MPa was achieved in the substrate with the Al2O3 film deposited by ALD. From these results, LT or LN/Quartz substrates with the Al2O3 film deposited by ALD are promising materials to reduce residual stress toward SAW devices for 5G mobile communication.

元の言語English
ホスト出版物のタイトル2019 International Conference on Electronics Packaging, ICEP 2019
出版者Institute of Electrical and Electronics Engineers Inc.
ページ414-417
ページ数4
ISBN(電子版)9784990218867
DOI
出版物ステータスPublished - 2019 4 1
イベント2019 International Conference on Electronics Packaging, ICEP 2019 - Niigata, Japan
継続期間: 2019 4 172019 4 20

出版物シリーズ

名前2019 International Conference on Electronics Packaging, ICEP 2019

Conference

Conference2019 International Conference on Electronics Packaging, ICEP 2019
Japan
Niigata
期間19/4/1719/4/20

Fingerprint

Acoustic surface wave devices
Quartz
Amorphous films
Residual stresses
Substrates
Surface waves
Sputtering
Electron cyclotron resonance
Atomic layer deposition
Acoustic wave velocity
lithium tantalate oxide
lithium niobate
Ion beams
Acoustic waves
Communication

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Metals and Alloys

これを引用

Tezuka, A., Kuwae, H., Yamada, K., Shoji, S., Kakio, S., & Mizuno, J. (2019). Study of Low-residual Stress Amorphous Film Deposition Method for LiTaO3/Quartz or LiNbO3/Quartz Bonding toward 5G Surface Acoustic Wave Devices. : 2019 International Conference on Electronics Packaging, ICEP 2019 (pp. 414-417). [8733501] (2019 International Conference on Electronics Packaging, ICEP 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/ICEP.2019.8733501

Study of Low-residual Stress Amorphous Film Deposition Method for LiTaO3/Quartz or LiNbO3/Quartz Bonding toward 5G Surface Acoustic Wave Devices. / Tezuka, Ami; Kuwae, Hiroyuki; Yamada, Kosuke; Shoji, Shuichi; Kakio, Shoji; Mizuno, Jun.

2019 International Conference on Electronics Packaging, ICEP 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 414-417 8733501 (2019 International Conference on Electronics Packaging, ICEP 2019).

研究成果: Conference contribution

Tezuka, A, Kuwae, H, Yamada, K, Shoji, S, Kakio, S & Mizuno, J 2019, Study of Low-residual Stress Amorphous Film Deposition Method for LiTaO3/Quartz or LiNbO3/Quartz Bonding toward 5G Surface Acoustic Wave Devices. : 2019 International Conference on Electronics Packaging, ICEP 2019., 8733501, 2019 International Conference on Electronics Packaging, ICEP 2019, Institute of Electrical and Electronics Engineers Inc., pp. 414-417, 2019 International Conference on Electronics Packaging, ICEP 2019, Niigata, Japan, 19/4/17. https://doi.org/10.23919/ICEP.2019.8733501
Tezuka A, Kuwae H, Yamada K, Shoji S, Kakio S, Mizuno J. Study of Low-residual Stress Amorphous Film Deposition Method for LiTaO3/Quartz or LiNbO3/Quartz Bonding toward 5G Surface Acoustic Wave Devices. : 2019 International Conference on Electronics Packaging, ICEP 2019. Institute of Electrical and Electronics Engineers Inc. 2019. p. 414-417. 8733501. (2019 International Conference on Electronics Packaging, ICEP 2019). https://doi.org/10.23919/ICEP.2019.8733501
Tezuka, Ami ; Kuwae, Hiroyuki ; Yamada, Kosuke ; Shoji, Shuichi ; Kakio, Shoji ; Mizuno, Jun. / Study of Low-residual Stress Amorphous Film Deposition Method for LiTaO3/Quartz or LiNbO3/Quartz Bonding toward 5G Surface Acoustic Wave Devices. 2019 International Conference on Electronics Packaging, ICEP 2019. Institute of Electrical and Electronics Engineers Inc., 2019. pp. 414-417 (2019 International Conference on Electronics Packaging, ICEP 2019).
@inproceedings{0571cfcfe06e410b84fe15f8fc94378c,
title = "Study of Low-residual Stress Amorphous Film Deposition Method for LiTaO3/Quartz or LiNbO3/Quartz Bonding toward 5G Surface Acoustic Wave Devices",
abstract = "LiTaO3 (LT) or LiNbO3 (LN)/Quartz bonded substrates with an amorphous intermediate layer were proposed to achieve both a large surface acoustic wave (SAW) velocity and a smaller temperature coefficient of frequency. Residual stress reduction of the amorphous film is expected to improve the bonding strength of a SAW substrate. In this report, we studied a method of low-residual stress amorphous film deposition for LT or LN/Quartz bonding. The residual stress of the LT substrate with an amorphous SiO2 or Al2O3 film deposited by ion beam sputtering, electron cyclotron resonance sputtering, and atomic layer deposition was evaluated. The LT substrate with the amorphous Al2O3 film deposited by ALD had the minimum warpage (-0.152 μm) and residual stress (127.3 MPa). The residual stress of the Al2O3 film deposited by ALD might be reduced because almost the same thickness of the Al2O3 film was deposited on both sides of the LT substrate at the same time. The maximum bonding strength of 3.7 MPa was achieved in the substrate with the Al2O3 film deposited by ALD. From these results, LT or LN/Quartz substrates with the Al2O3 film deposited by ALD are promising materials to reduce residual stress toward SAW devices for 5G mobile communication.",
keywords = "Amorphous film, Amorphous intermediate bonding, LiNbO3, LiTaO3, Quartz, Residual stress, SAW device",
author = "Ami Tezuka and Hiroyuki Kuwae and Kosuke Yamada and Shuichi Shoji and Shoji Kakio and Jun Mizuno",
year = "2019",
month = "4",
day = "1",
doi = "10.23919/ICEP.2019.8733501",
language = "English",
series = "2019 International Conference on Electronics Packaging, ICEP 2019",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "414--417",
booktitle = "2019 International Conference on Electronics Packaging, ICEP 2019",

}

TY - GEN

T1 - Study of Low-residual Stress Amorphous Film Deposition Method for LiTaO3/Quartz or LiNbO3/Quartz Bonding toward 5G Surface Acoustic Wave Devices

AU - Tezuka, Ami

AU - Kuwae, Hiroyuki

AU - Yamada, Kosuke

AU - Shoji, Shuichi

AU - Kakio, Shoji

AU - Mizuno, Jun

PY - 2019/4/1

Y1 - 2019/4/1

N2 - LiTaO3 (LT) or LiNbO3 (LN)/Quartz bonded substrates with an amorphous intermediate layer were proposed to achieve both a large surface acoustic wave (SAW) velocity and a smaller temperature coefficient of frequency. Residual stress reduction of the amorphous film is expected to improve the bonding strength of a SAW substrate. In this report, we studied a method of low-residual stress amorphous film deposition for LT or LN/Quartz bonding. The residual stress of the LT substrate with an amorphous SiO2 or Al2O3 film deposited by ion beam sputtering, electron cyclotron resonance sputtering, and atomic layer deposition was evaluated. The LT substrate with the amorphous Al2O3 film deposited by ALD had the minimum warpage (-0.152 μm) and residual stress (127.3 MPa). The residual stress of the Al2O3 film deposited by ALD might be reduced because almost the same thickness of the Al2O3 film was deposited on both sides of the LT substrate at the same time. The maximum bonding strength of 3.7 MPa was achieved in the substrate with the Al2O3 film deposited by ALD. From these results, LT or LN/Quartz substrates with the Al2O3 film deposited by ALD are promising materials to reduce residual stress toward SAW devices for 5G mobile communication.

AB - LiTaO3 (LT) or LiNbO3 (LN)/Quartz bonded substrates with an amorphous intermediate layer were proposed to achieve both a large surface acoustic wave (SAW) velocity and a smaller temperature coefficient of frequency. Residual stress reduction of the amorphous film is expected to improve the bonding strength of a SAW substrate. In this report, we studied a method of low-residual stress amorphous film deposition for LT or LN/Quartz bonding. The residual stress of the LT substrate with an amorphous SiO2 or Al2O3 film deposited by ion beam sputtering, electron cyclotron resonance sputtering, and atomic layer deposition was evaluated. The LT substrate with the amorphous Al2O3 film deposited by ALD had the minimum warpage (-0.152 μm) and residual stress (127.3 MPa). The residual stress of the Al2O3 film deposited by ALD might be reduced because almost the same thickness of the Al2O3 film was deposited on both sides of the LT substrate at the same time. The maximum bonding strength of 3.7 MPa was achieved in the substrate with the Al2O3 film deposited by ALD. From these results, LT or LN/Quartz substrates with the Al2O3 film deposited by ALD are promising materials to reduce residual stress toward SAW devices for 5G mobile communication.

KW - Amorphous film

KW - Amorphous intermediate bonding

KW - LiNbO3

KW - LiTaO3

KW - Quartz

KW - Residual stress

KW - SAW device

UR - http://www.scopus.com/inward/record.url?scp=85068309815&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85068309815&partnerID=8YFLogxK

U2 - 10.23919/ICEP.2019.8733501

DO - 10.23919/ICEP.2019.8733501

M3 - Conference contribution

AN - SCOPUS:85068309815

T3 - 2019 International Conference on Electronics Packaging, ICEP 2019

SP - 414

EP - 417

BT - 2019 International Conference on Electronics Packaging, ICEP 2019

PB - Institute of Electrical and Electronics Engineers Inc.

ER -