Study of polarization phenomena in Schottky CdTe diodes using infrared light illumination

Goro Sato*, Taro Fukuyama, Shin Watanabe, Hirokazu Ikeda, Masayuki Ohta, Shin'Nosuke Ishikawa, Tadayuki Takahashi, Hiroyuki Shiraki, Ryoichi Ohno

*この研究の対応する著者

研究成果: Article査読

15 被引用数 (Scopus)

抄録

Schottky CdTe diode detectors suffer from a polarization phenomenon, which is characterized by degradation of the spectral properties over time following exposure to high bias voltage. This is considered attributable to charge accumulation at deep acceptor levels. A Schottky CdTe diode was illuminated with an infrared light for a certain period during a bias operation, and two opposite behaviors emerged. The detector showed a recovery when illuminated after the bias-induced polarization had completely progressed. Conversely, when the detector was illuminated before the emergence of bias-induced polarization, the degradation of the spectral properties was accelerated. Interpretation of these effects and discussion on the energy level of deep acceptors are presented.

本文言語English
ページ(範囲)149-152
ページ数4
ジャーナルNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
652
1
DOI
出版ステータスPublished - 2011 10 1

ASJC Scopus subject areas

  • 器械工学
  • 核物理学および高エネルギー物理学

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