Study of self-align doped channel structure for low power and low 1/f noise operation

Takashi Yoshitomi*, Hideki Kimijima, Shinnichiro Ishizuka, Yasunori Miyahara, Tatsuya Ohguro, Eiji Morifuji, Toyota Morimoto, Hisayo Sasaki Momose, Yasuhiro Katsumata, Hiroshi Iwai

*この研究の対応する著者

研究成果: Conference article査読

2 被引用数 (Scopus)

抄録

Self-align doped channel (SADC) which can minimize the 1/f noise and junction capacitance is studied. Several severe expected problems such as the controllability of the diffusion and TDDB of the gate oxide are overcome to be seriously considered for the products. In addition, this structure is attractive for small geometry high performance deice with low capacitance and low 1/f noise.

本文言語English
ページ(範囲)98-99
ページ数2
ジャーナルDigest of Technical Papers - Symposium on VLSI Technology
出版ステータスPublished - 1998
外部発表はい
イベントProceedings of the 1998 Symposium on VLSI Technology - Honolulu, HI, USA
継続期間: 1998 6月 91998 6月 11

ASJC Scopus subject areas

  • 電子工学および電気工学

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