Study of self-align doped channel structure for low power and low 1/f noise operation

Takashi Yoshitomi, Hideki Kimijima, Shinnichiro Ishizuka, Yasunori Miyahara, Tatsuya Ohguro, Eiji Morifuji, Toyota Morimoto, Hisayo Sasaki Momose, Yasuhiro Katsumata, Hiroshi Iwai

研究成果: Conference article査読

2 被引用数 (Scopus)

抄録

Self-align doped channel (SADC) which can minimize the 1/f noise and junction capacitance is studied. Several severe expected problems such as the controllability of the diffusion and TDDB of the gate oxide are overcome to be seriously considered for the products. In addition, this structure is attractive for small geometry high performance deice with low capacitance and low 1/f noise.

本文言語English
ページ(範囲)98-99
ページ数2
ジャーナルDigest of Technical Papers - Symposium on VLSI Technology
出版ステータスPublished - 1998
外部発表はい
イベントProceedings of the 1998 Symposium on VLSI Technology - Honolulu, HI, USA
継続期間: 1998 6 91998 6 11

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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