Self-align doped channel (SADC) which can minimize the 1/f noise and junction capacitance is studied. Several severe expected problems such as the controllability of the diffusion and TDDB of the gate oxide are overcome to be seriously considered for the products. In addition, this structure is attractive for small geometry high performance deice with low capacitance and low 1/f noise.
|ジャーナル||Digest of Technical Papers - Symposium on VLSI Technology|
|出版ステータス||Published - 1998|
|イベント||Proceedings of the 1998 Symposium on VLSI Technology - Honolulu, HI, USA|
継続期間: 1998 6 9 → 1998 6 11
ASJC Scopus subject areas
- Electrical and Electronic Engineering