Study of tunneling time in tunneling BI‐quantum‐well and resonant tuneling barrier structures

Yoshihiro Sugiyama; Tsuguo Inata; Atsushi Tackeuchi; Yoshiaki Nakata; Satoshi Nakamura; Shunichi Muto

doi:10.1002/mop.4650070304

Study of tunneling time in tunneling BI‐quantum‐well and resonant tuneling barrier structures

Yoshihiro Sugiyama^*, Tsuguo Inata, Atsushi Tackeuchi, Yoshiaki Nakata, Satoshi Nakamura, Shunichi Muto

^*この研究の対応する著者

研究成果: Article › 査読

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We studied the electron tunneling time in tunneling bi‐quantum‐well and resonant tunneling burrier structures with a pump‐probe photo‐luminescence system using optical mixing. The tunneling time decreased as the temperature increased, which is attributed to electrons in an exciton state thermalizing into free electrons having a faster tunneling time. © 1994 John Wiley & Sons, Inc.

本文言語	English
ページ（範囲）	85-88
ページ数	4
ジャーナル	Microwave and Optical Technology Letters
巻	7
号	3
DOI	https://doi.org/10.1002/mop.4650070304
出版ステータス	Published - 1994 2月 20
外部発表	はい

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
原子分子物理学および光学
凝縮系物理学
電子工学および電気工学

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10.1002/mop.4650070304

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AU - Tackeuchi, Atsushi

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AU - Nakamura, Satoshi

AU - Muto, Shunichi

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Study of tunneling time in tunneling BI‐quantum‐well and resonant tuneling barrier structures

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