Study on direct etching of poly(tetrafluoroethylene) by high-energy heavy ion beams

Hidehiro Tsubokura; Akihiro Oshima; Tomoko G. Oyama; Yuya Takasawa; Naoyuki Fukutake; Satoshi Okubo; Taeko Yoshikawa; Toshitaka Oka; Takeshi Murakami; Yoshimasa Hama; Masakazu Washio

doi:10.1016/j.radphyschem.2013.06.020

Study on direct etching of poly(tetrafluoroethylene) by high-energy heavy ion beams

Hidehiro Tsubokura, Akihiro Oshima^*, Tomoko G. Oyama, Yuya Takasawa, Naoyuki Fukutake, Satoshi Okubo, Taeko Yoshikawa, Toshitaka Oka, Takeshi Murakami, Yoshimasa Hama, Masakazu Washio

^*この研究の対応する著者

先進理工学部

研究成果: Article › 査読

3 被引用数 (Scopus)

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Micro-fabrication of poly(tetrafluoroethylene) (PTFE) was carried out using a high-energy heavy ion beam in the MeV region. PTFE was irradiated with various ions (6MeV/u) under vacuum (<1.0×10^-4Pa) at room temperature (298K). The surface of the irradiated PTFE was observed by laser microscopy and a scanning electron microscope (SEM). Micro-scale fabrications of PTFE were successfully performed by direct ion beam etching. Under our experimental conditions the etching proceeded more effectively by heavy ion beams (larger than N⁷⁺), compared with lower-energy ion beams (keV region). A larger atomic number (Z) of the irradiating ion induced higher etching rates in PTFE; the etching rate for Ne¹⁰⁺ and Xe⁵⁴⁺ changed from 6.5×10^-13 to 2.0×10^-11μm/(ioncm^-2), respectively. As a result we suggest that due to their high electronic stopping powers, etching could be efficiently achieved using high-energy ion beams.

本文言語	English
ページ（範囲）	37-42
ページ数	6
ジャーナル	Radiation Physics and Chemistry
巻	92
DOI	https://doi.org/10.1016/j.radphyschem.2013.06.020
出版ステータス	Published - 2013 11月

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10.1016/j.radphyschem.2013.06.020

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@article{3e476866cc364769a3f6093b90b5d972,

title = "Study on direct etching of poly(tetrafluoroethylene) by high-energy heavy ion beams",

abstract = "Micro-fabrication of poly(tetrafluoroethylene) (PTFE) was carried out using a high-energy heavy ion beam in the MeV region. PTFE was irradiated with various ions (6MeV/u) under vacuum (<1.0×10-4Pa) at room temperature (298K). The surface of the irradiated PTFE was observed by laser microscopy and a scanning electron microscope (SEM). Micro-scale fabrications of PTFE were successfully performed by direct ion beam etching. Under our experimental conditions the etching proceeded more effectively by heavy ion beams (larger than N7+), compared with lower-energy ion beams (keV region). A larger atomic number (Z) of the irradiating ion induced higher etching rates in PTFE; the etching rate for Ne10+ and Xe54+ changed from 6.5×10-13 to 2.0×10-11μm/(ioncm-2), respectively. As a result we suggest that due to their high electronic stopping powers, etching could be efficiently achieved using high-energy ion beams.",

keywords = "Direct etching, Heavy ion beam, LET, Micro-fabrication, PTFE, Stopping power",

author = "Hidehiro Tsubokura and Akihiro Oshima and Oyama, {Tomoko G.} and Yuya Takasawa and Naoyuki Fukutake and Satoshi Okubo and Taeko Yoshikawa and Toshitaka Oka and Takeshi Murakami and Yoshimasa Hama and Masakazu Washio",

note = "Funding Information: This study was supported by the Research Institute for Science and Engineering (RISE) research project: “Nano-fabrication of polymers by means of quantum beam technology”, Waseda University ( 11L01 ), and the research projects with heavy ions at NIRS-HIMAC ( 19P186 , 10H186 ). The authors would like to thank the staff of the HIMAC operation division and the accelerator engineering company for help with the ion beam irradiation experiments. A part of this work (Oshima) was supported by a Grant-in-Aid for Young Scientists (A) 21686087 from the Japan Society for the promotion of science (JSPS) . Copyright: Copyright 2013 Elsevier B.V., All rights reserved.",

year = "2013",

month = nov,

doi = "10.1016/j.radphyschem.2013.06.020",

language = "English",

volume = "92",

pages = "37--42",

journal = "Radiation Physics and Chemistry",

issn = "0969-806X",

publisher = "Elsevier Limited",

}

TY - JOUR

T1 - Study on direct etching of poly(tetrafluoroethylene) by high-energy heavy ion beams

AU - Tsubokura, Hidehiro

AU - Oshima, Akihiro

AU - Oyama, Tomoko G.

AU - Takasawa, Yuya

AU - Fukutake, Naoyuki

AU - Okubo, Satoshi

AU - Yoshikawa, Taeko

AU - Oka, Toshitaka

AU - Murakami, Takeshi

AU - Hama, Yoshimasa

AU - Washio, Masakazu

N1 - Funding Information: This study was supported by the Research Institute for Science and Engineering (RISE) research project: “Nano-fabrication of polymers by means of quantum beam technology”, Waseda University ( 11L01 ), and the research projects with heavy ions at NIRS-HIMAC ( 19P186 , 10H186 ). The authors would like to thank the staff of the HIMAC operation division and the accelerator engineering company for help with the ion beam irradiation experiments. A part of this work (Oshima) was supported by a Grant-in-Aid for Young Scientists (A) 21686087 from the Japan Society for the promotion of science (JSPS) . Copyright: Copyright 2013 Elsevier B.V., All rights reserved.

PY - 2013/11

Y1 - 2013/11

N2 - Micro-fabrication of poly(tetrafluoroethylene) (PTFE) was carried out using a high-energy heavy ion beam in the MeV region. PTFE was irradiated with various ions (6MeV/u) under vacuum (<1.0×10-4Pa) at room temperature (298K). The surface of the irradiated PTFE was observed by laser microscopy and a scanning electron microscope (SEM). Micro-scale fabrications of PTFE were successfully performed by direct ion beam etching. Under our experimental conditions the etching proceeded more effectively by heavy ion beams (larger than N7+), compared with lower-energy ion beams (keV region). A larger atomic number (Z) of the irradiating ion induced higher etching rates in PTFE; the etching rate for Ne10+ and Xe54+ changed from 6.5×10-13 to 2.0×10-11μm/(ioncm-2), respectively. As a result we suggest that due to their high electronic stopping powers, etching could be efficiently achieved using high-energy ion beams.

AB - Micro-fabrication of poly(tetrafluoroethylene) (PTFE) was carried out using a high-energy heavy ion beam in the MeV region. PTFE was irradiated with various ions (6MeV/u) under vacuum (<1.0×10-4Pa) at room temperature (298K). The surface of the irradiated PTFE was observed by laser microscopy and a scanning electron microscope (SEM). Micro-scale fabrications of PTFE were successfully performed by direct ion beam etching. Under our experimental conditions the etching proceeded more effectively by heavy ion beams (larger than N7+), compared with lower-energy ion beams (keV region). A larger atomic number (Z) of the irradiating ion induced higher etching rates in PTFE; the etching rate for Ne10+ and Xe54+ changed from 6.5×10-13 to 2.0×10-11μm/(ioncm-2), respectively. As a result we suggest that due to their high electronic stopping powers, etching could be efficiently achieved using high-energy ion beams.

KW - Direct etching

KW - Heavy ion beam

KW - LET

KW - Micro-fabrication

KW - PTFE

KW - Stopping power

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U2 - 10.1016/j.radphyschem.2013.06.020

DO - 10.1016/j.radphyschem.2013.06.020

M3 - Article

AN - SCOPUS:84883052893

VL - 92

SP - 37

EP - 42

JO - Radiation Physics and Chemistry

JF - Radiation Physics and Chemistry

SN - 0969-806X

ER -

Study on direct etching of poly(tetrafluoroethylene) by high-energy heavy ion beams

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