Study on formation mechanism of (112̄0) textured Zno films

Takayuki Kawamoto*, Mami Matsukawa, Yoshiaki Watanabe, Takahiko Yanagitani

*この研究の対応する著者

研究成果: Conference contribution

4 被引用数 (Scopus)

抄録

The ZnO films where crystallites c-axis are unidirectionally aligned in the substrate plane ((112̄0) textured ZnO films) realize shear mode devices. In this study, we have studied the formation mechanism of the (112̄0) textured ZnO film, focusing on the effect of total pressure and partial pressure of oxygen and argon during sputtering deposition. In addition to the X-ray diffraction (XRD) measurement of the films, optical emissions from the RF plasma were analyzed to investigate the effect of ionic species on the growth of the ZnO films. Highly crystallized (112̄0) textured ZnO films were obtained in conditions of low total gas pressure and high oxygen concentration. In these conditions, strong optical emission spectra from oxygen species were strongly observed. The best shear mode electromechanical coupling coefficient k 15 of the film was 0.16, which was 62 % of the value of single crystal.

本文言語English
ホスト出版物のタイトル2006 IEEE International Ultrasonics Symposium, IUS
ページ1529-1532
ページ数4
DOI
出版ステータスPublished - 2006 12月 1
外部発表はい

出版物シリーズ

名前Proceedings - IEEE Ultrasonics Symposium
1
ISSN(印刷版)1051-0117

ASJC Scopus subject areas

  • 音響学および超音波学

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