Study on solid structure of pentacene thin films using Raman imaging

Keisuke Seto, Yukio Furukawa*

*この研究の対応する著者

研究成果: Article査読

21 被引用数 (Scopus)

抄録

We present a 532-nm excited Raman imaging study of pentacene thin films (thickness, 2, 5, 10, 20, 50, 100, and 150 nm) prepared on an SiO2 surface. The structure of the pentacene films has been investigated by images and histograms of the ratio (R) of intensity of the 1596-cm-1 band (b3g) to that of the 1533-cm-1 band (ag), which can be used as a marker of solid-state phases: 1.54-nm and 1.44-nm phases. The Raman images showed that island-like 1.44-nm phase domains are grown on the 1.54-nm phase layer from 50 nm, and all the surface of the 1.54-nm phase layer is covered with the 1.44-nm phase layer from 100 nm. The structural disorders have been discussed on the basis of the full width at half maximum of a band in the histogram of the R values for each film.

本文言語English
ページ(範囲)2015-2019
ページ数5
ジャーナルJournal of Raman Spectroscopy
43
12
DOI
出版ステータスPublished - 2012 12 1

ASJC Scopus subject areas

  • 材料科学(全般)
  • 分光学

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