Study on solid structure of pentacene thin films using Raman imaging

Keisuke Seto, Yukio Furukawa

    研究成果: Article

    18 引用 (Scopus)

    抄録

    We present a 532-nm excited Raman imaging study of pentacene thin films (thickness, 2, 5, 10, 20, 50, 100, and 150 nm) prepared on an SiO2 surface. The structure of the pentacene films has been investigated by images and histograms of the ratio (R) of intensity of the 1596-cm-1 band (b3g) to that of the 1533-cm-1 band (ag), which can be used as a marker of solid-state phases: 1.54-nm and 1.44-nm phases. The Raman images showed that island-like 1.44-nm phase domains are grown on the 1.54-nm phase layer from 50 nm, and all the surface of the 1.54-nm phase layer is covered with the 1.44-nm phase layer from 100 nm. The structural disorders have been discussed on the basis of the full width at half maximum of a band in the histogram of the R values for each film.

    元の言語English
    ページ(範囲)2015-2019
    ページ数5
    ジャーナルJournal of Raman Spectroscopy
    43
    発行部数12
    DOI
    出版物ステータスPublished - 2012 12

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    Imaging techniques
    Thin films
    Full width at half maximum
    Film thickness
    pentacene

    ASJC Scopus subject areas

    • Spectroscopy
    • Materials Science(all)

    これを引用

    Study on solid structure of pentacene thin films using Raman imaging. / Seto, Keisuke; Furukawa, Yukio.

    :: Journal of Raman Spectroscopy, 巻 43, 番号 12, 12.2012, p. 2015-2019.

    研究成果: Article

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