Sub-50-nm structure patterning by combining nanoimprint lithography and anisotropic wet etching without considering original mold resolution

Hiroyuki Kuwae*, Akiko Okada, Shuichi Shoji, Jun Mizuno

*この研究の対応する著者

研究成果: Article査読

8 被引用数 (Scopus)

抄録

A novel strategy for fabricating nanostructures was demonstrated that combined nanoimprint lithography and anisotropic wet etching. The resolution of proposed method does not depend on that of an original imprint mold. Atomically sharp V-grooves were formed by anisotropic wet etching using a SiO2 etching mask fabricated by nanoimprint lithography. Atomic scale precision was performed by anisotropic etchant of tetramethylammonium hydroxide solution with adding a small amount of surfactant at room temperature. Using the V-grooves as a template, Al2O3/Al was deposited and etched by angled Ar ion milling after planarization with thick resin. Sub-50-nm metal structures were achieved with 72% size reduction of the initial mold structure.

本文言語English
ページ(範囲)39-42
ページ数4
ジャーナルMicroelectronic Engineering
169
DOI
出版ステータスPublished - 2017 2 5

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 原子分子物理学および光学
  • 凝縮系物理学
  • 表面、皮膜および薄膜
  • 電子工学および電気工学

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