Sub-50-nm structure patterning by combining nanoimprint lithography and anisotropic wet etching without considering original mold resolution

Engineering & Materials Science

• Anisotropic etching 100%
• Nanoimprint lithography 99%
• Wet etching 89%
• Nanostructures 39%
• Surface active agents 35%
• Etching 34%
• Aluminum oxide 30%
• Masks 30%
• Ions 29%
• Resins 28%
• Metals 20%
• Temperature 12%

Physics & Astronomy

• V grooves 58%
• lithography 53%
• etching 48%
• etchants 26%
• hydroxides 24%
• resins 21%
• surfactants 20%
• templates 19%
• masks 18%
• room temperature 11%
• metals 10%
• ions 10%

Chemical Compounds

• Etching 57%
• Size Reduction 27%
• Surfactant 14%
• Nanomaterial 13%
• Ambient Reaction Temperature 11%
• Metal 9%
• Amount 9%
• Ion 8%