Sub-picosecond exciton spin-relaxation in GaN

Atsushi Tackeuchi, Takamasa Kuroda, Hirotaka Otake, Kazuyoshi Taniguchi, Takako Chinone, Ji Hao Liang, Masataka Kajikawa, Naochika Horio

研究成果: Conference contribution

抜粋

Exciton spin relaxations in bulk GaN were directly observed with sub-picosecond's time resolution. The obtained spin relaxation times of A-band free exciton are 0.47 ps - 0.25 ps at 150 K - 225 K. The spin relaxation time of the acceptor bound exciton at 15K is measured to be 1.1 ps. These are at least one order of magnitude shorter than those of the other III-V compound semiconductors. The spin relaxation time of A-band free exciton is found to be proportional to T1.4, where T is the temperature. The fact that the spin relaxation time in GaN is shorter than that in GaAs, in spite of the small spin-orbit splitting, suggests that the spin relaxation is dominated by the defect-assisted Elliot-Yafet process.

元の言語English
ホスト出版物のタイトルUltrafast Phenomena in Semiconductors and Nanostructure Materials X
DOI
出版物ステータスPublished - 2006 5 23
イベントUltrafast Phenomena in Semiconductors and Nanostructure Materials X - San Jose, CA, United States
継続期間: 2006 1 232006 1 25

出版物シリーズ

名前Proceedings of SPIE - The International Society for Optical Engineering
6118
ISSN(印刷物)0277-786X

Conference

ConferenceUltrafast Phenomena in Semiconductors and Nanostructure Materials X
United States
San Jose, CA
期間06/1/2306/1/25

    フィンガープリント

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

これを引用

Tackeuchi, A., Kuroda, T., Otake, H., Taniguchi, K., Chinone, T., Liang, J. H., Kajikawa, M., & Horio, N. (2006). Sub-picosecond exciton spin-relaxation in GaN. : Ultrafast Phenomena in Semiconductors and Nanostructure Materials X [611803] (Proceedings of SPIE - The International Society for Optical Engineering; 巻数 6118). https://doi.org/10.1117/12.640263