Subband mobility of quasi-two-dimensional electrons in Si atomic layer doped GaAs

Syoji Yamada, Toshiki Makimoto

研究成果: Article査読

48 被引用数 (Scopus)

抄録

Subband mobility and conductivity of quasi-two-dimensional electrons in Si atomic layer doped GaAs are estimated for the first time. The oscillations for different subbands in low-temperature magnetoresistance are separated from each other by using the reverse Fourier transform technique. The mobility for each subband is then determined by fitting the field dependence of the amplitudes with conventional theory. A large subband mobility difference up to 20:1 is found. This is mainly due to strong screening. Furthermore, a partial conductivity for each subband is calculated and the importance of the shallower subbands in total current transport is clarified.

本文言語English
ページ(範囲)1022-1024
ページ数3
ジャーナルApplied Physics Letters
57
10
DOI
出版ステータスPublished - 1990
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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